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PHKD3NQ10T/T3

Description
Power Field-Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size291KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric Compare View All

PHKD3NQ10T/T3 Overview

Power Field-Effect Transistor

PHKD3NQ10T/T3 Parametric

Parameter NameAttribute value
MakerNexperia
package instructionSMALL OUTLINE, R-PDSO-G8
Reach Compliance Codecompliant
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)3 A
Maximum drain-source on-resistance0.09 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)12 A
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia

PHKD3NQ10T/T3 Related Products

PHKD3NQ10T/T3 934055906118 PHKD3NQ10T
Description Power Field-Effect Transistor Power Field-Effect Transistor Power Field-Effect Transistor
Maker Nexperia Nexperia Nexperia
package instruction SMALL OUTLINE, R-PDSO-G8 PLASTIC, SMD, SO-8 SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code compliant unknown compliant
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V 100 V
Maximum drain current (ID) 3 A 3 A 3 A
Maximum drain-source on-resistance 0.09 Ω 0.09 Ω 0.09 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
Number of components 2 2 2
Number of terminals 8 8 8
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 12 A 12 A 12 A
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Is it Rohs certified? - incompatible conform to
Peak Reflow Temperature (Celsius) - NOT SPECIFIED 260
Maximum time at peak reflow temperature - NOT SPECIFIED 30
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