UNISONIC TECHNOLOGIES CO., LTD
9N65
Preliminary
Power MOSFET
9A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
9N65
is an N-channel mode power MOSFET using UTC’s
advanced technology to provide customers with planar stripe and
DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC
9N65
is generally applied in high efficiency switch mode
power supplies and uninterruptible power supplies.
FEATURES
* R
DS(ON)
=1.1Ω @ V
GSS
=10V
* High Switching Speed
* Improved dv/dt Capability
* 100% Avalanche Tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
9N65L-TA3-T
9N65L-TF3-T
Note: Pin Assignment: G: Gate
Halogen Free
9N65G-TA3-T
9N65G-TF3-T
D: Drain
S: Source
Package
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-618.d
9N65
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
J
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
9
A
Continuous, @T
C
=25°C
I
D
V
GSS
@10V
Drain Current
@T
C
=100°C
5.4
A
Pulsed (Note 2)
I
DM
36
A
Avalanche Current (Note 2)
I
AR
5.2
A
16
mJ
Single Pulsed (Note 2)
E
AR
Avalanche Energy
Repetitive (Note 3)
E
AS
375
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
2.8
V/ns
167
TO-220
W
Power Dissipation(@T
C
=25°C)
TO-220F
44
P
D
TO-220
1.3
Linear Derating Factor
W/°C
TO-220F
0.35
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Starting T
J
=25°C, L=9.25mH, R
G
=25Ω, I
AS
=9A.
4. I
SD
≤5.2A,
di/dt≤90A/µs, V
DD
≤BV
DSS
, T
J
≤150°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F
TO-220
TO-220F
SYMBOL
θ
JA
θ
JC
RATINGS
62
62.5
0.75
2.86
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-618.d
9N65
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
650
0.67
25
250
+100
-100
2.0
4.0
0.85 1.1
1417
177
7
48
12
19
14
20
34
18
9
36
1.5
V
V/°C
µA
nA
nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
I
D
=250µA, V
GS
=0V
Reference to 25°C, I
D
=1mA
∆
BV
DSS
/∆T
J
(Note 3)
V
DS
=650V, V
GS
=0V
I
DSS
V
DS
=520V, V
GS
=0V, T
J
=125°C
Forward
V
GS
=+30V
I
GSS
Reverse
V
GS
=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=5.1A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=520V, V
GS
=10V, I
D
=9A
Gate to Source Charge
Q
GS
(Note 2)
Gate to Drain ("Miller") Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=325V, I
D
=9A, R
G
=9.1Ω,
R
D
= 62Ω (Note 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
MOSFET symbol
showing the integral
Maximum Body-Diode Pulsed Current
reverse p-n junction
I
SM
(Note 1)
diode.
Drain-Source Diode Forward Voltage
V
SD
T
J
=25°C, I
S
=9A,V
GS
=0V(Note 2)
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse width≤300µs; duty cycle≤2%.
3. Uses IRFIB5N65A data and test conditions
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-618.d
9N65
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R502-618.d
9N65
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R502-618.d
京公网安备 11010802033920号
EEWORLD
