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9N65L-TA3-T

Description
9A, 650V N-CHANNEL POWER MOSFET
File Size170KB,5 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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9N65L-TA3-T Overview

9A, 650V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD
9N65
Preliminary
Power MOSFET
9A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
9N65
is an N-channel mode power MOSFET using UTC’s
advanced technology to provide customers with planar stripe and
DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC
9N65
is generally applied in high efficiency switch mode
power supplies and uninterruptible power supplies.
FEATURES
* R
DS(ON)
=1.1Ω @ V
GSS
=10V
* High Switching Speed
* Improved dv/dt Capability
* 100% Avalanche Tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
9N65L-TA3-T
9N65L-TF3-T
Note: Pin Assignment: G: Gate
Halogen Free
9N65G-TA3-T
9N65G-TF3-T
D: Drain
S: Source
Package
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 5
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9N65L-TA3-T Related Products

9N65L-TA3-T 9N65 9N65G-TA3-T 9N65G-TF3-T 9N65L-TF3-T
Description 9A, 650V N-CHANNEL POWER MOSFET 9A, 650V N-CHANNEL POWER MOSFET 9A, 650V N-CHANNEL POWER MOSFET 9A, 650V N-CHANNEL POWER MOSFET 9A, 650V N-CHANNEL POWER MOSFET
Is it Rohs certified? - - conform to conform to conform to
Maker - - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code - - TO-220AB TO-220AB TO-220AB
package instruction - - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts - - 3 3 3
Reach Compliance Code - - compli compli compli
Avalanche Energy Efficiency Rating (Eas) - - 375 mJ 375 mJ 375 mJ
Shell connection - - ISOLATED ISOLATED ISOLATED
Configuration - - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - - 650 V 650 V 650 V
Maximum drain current (ID) - - 9 A 9 A 9 A
Maximum drain-source on-resistance - - 1.1 Ω 1.1 Ω 1.1 Ω
FET technology - - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - - TO-220AB TO-220AB TO-220AB
JESD-30 code - - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components - - 1 1 1
Number of terminals - - 3 3 3
Operating mode - - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - - N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) - - 36 A 36 A 36 A
surface mount - - NO NO NO
Terminal form - - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location - - SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications - - SWITCHING SWITCHING SWITCHING
Transistor component materials - - SILICON SILICON SILICON
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