This product complies with the RoHS Directive (EU 2002/95/EC).
DSC5501
Features
Silicon NPN epitaxial planar type
For low frequency amplification
DSC2501 in SMini3 type package
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Package
Code
SMini3-F2-B
Name
Pin
1. Base
2. Emitter
3. Collector
Unit
V
V
V
A
A
mW
°C
°C
Packaging
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
25
20
12
0.5
1
150
150
–55 to +150
Marking Symbol: E3
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*2
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
ON resistance
*3
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on
Conditions
I
C
= 10
mA,
I
E
= 0
I
C
= 1 mA, I
B
= 0
I
E
= 10
mA,
I
C
= 0
V
CB
= 25 V, I
E
= 0
V
CE
= 2 V, I
C
= 0.5 A
I
C
= 0.5 A, I
B
= 20 mA
I
C
= 0.5 A, I
B
= 50 mA
V
CE
= 10 V, I
C
= 50 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Min
25
20
12
Typ
Max
Unit
V
V
V
100
200
0.18
150
6
1.0
800
0.40
1.2
nA
V
V
MHz
pF
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Code
Rank
h
FE
Marking Symbol
R
R
200 to 350
E3R
S
S
300 to 500
E3S
T
T
400 to 800
E3T
0
No-rank
200 to 800
E3
Product of no-rank is not classified and have no marking symbol for rank.
1 kΩ
*3: R
on
measurement circuit
f
=
1 kHz
V
=
0.3 V
V
B
V
V
V
A
R
on
=
V
B
×
1 000
(Ω)
V
A
−
V
B
Publication date: June 2010
ZJC00481AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DSC5501
DSC5501_PC-Ta
DSC5501_IC-VCE
DSC5501_hFE-IC
P
C
T
a
250
600
I
C
V
CE
I
B
=
3.0 mA
2.5 mA
2.0 mA
500
1.5 mA
1 000
T
a
=
25°C
h
FE
I
C
T
a
=
85°C
800
25°C
600
−30°C
V
CE
=
2 V
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
200
1.0 mA
400
0.5 mA
300
200
100
0
150
100
Forward current transfer ratio h
FE
6
400
50
200
0
0
40
80
120
160
200
Ambient temperature T
a
(
°C
)
DSC5501_VCEsat-IC
0
1
2
3
4
5
0
1
10
10
2
10
3
Collector-emitter voltage V
CE
(V)
DSC5501_IC-VBE
Collector current I
C
(mA)
DSC5501_Cob-VCB
V
CE(sat)
I
C
I
C
V
BE
C
ob
V
CB
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
14
12
10
8
6
4
2
0
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
I
C
/ I
B
= 25
500
V
CE
=
2 V
Collector current I
C
(mA)
400
T
a
=
85°C
300
−30°C
25°C
1
200
10
−1
T
a
=
85°C
−30°C
25°C
1
10
10
2
10
3
100
10
−2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
Collector current I
C
(mA)
DSC5501_fT-IC
Base-emitter voltage V
BE
(V)
DSC5501_VBEsat-IC
Collector-base voltage V
CB
(V)
f
T
I
C
V
BE(sat)
I
C
10
V
CE
= 10 V
T
a
=
25°C
200
Base-emitter saturation voltage V
BE(sat)
(V)
250
I
C
/ I
B
= 10
Transition frequency f
T
(MHz)
1
−30°C
T
a
=
85°C
150
25°C
10
−1
100
50
0
0.1
1
10
100
10
−2
1
10
10
2
10
3
Collector current I
C
(mA)
Collector current I
C
(mA)
2
ZJC00481AED
This product complies with the RoHS Directive (EU 2002/95/EC).
DSC5501
SMini3-F2-B
Unit: mm
2.00
±0.20
0.30
−
0.02
+0.05
3
1.25
±0.10
2.10
±0.10
1
(0.65)
2
(0.65)
0.13
−
0.02
+0.05
1.30
±0.10
(5°)
0.425
±0.05
(0.49)
(5°)
0 to 0.10
0.90
±0.10
ZJC00481AED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
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