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DSC5501T

Description
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size577KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DSC5501T Overview

Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, 3 PIN

DSC5501T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)400
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz

DSC5501T Preview

This product complies with the RoHS Directive (EU 2002/95/EC).
DSC5501
Features
Silicon NPN epitaxial planar type
For low frequency amplification
DSC2501 in SMini3 type package
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Package
Code
SMini3-F2-B
Name
Pin
1. Base
2. Emitter
3. Collector
Unit
V
V
V
A
A
mW
°C
°C
Packaging
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
25
20
12
0.5
1
150
150
–55 to +150
Marking Symbol: E3
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*2
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
ON resistance
*3
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on
Conditions
I
C
= 10
mA,
I
E
= 0
I
C
= 1 mA, I
B
= 0
I
E
= 10
mA,
I
C
= 0
V
CB
= 25 V, I
E
= 0
V
CE
= 2 V, I
C
= 0.5 A
I
C
= 0.5 A, I
B
= 20 mA
I
C
= 0.5 A, I
B
= 50 mA
V
CE
= 10 V, I
C
= 50 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Min
25
20
12
Typ
Max
Unit
V
V
V
100
200
0.18
150
6
1.0
800
0.40
1.2
nA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Code
Rank
h
FE
Marking Symbol
R
R
200 to 350
E3R
S
S
300 to 500
E3S
T
T
400 to 800
E3T
0
No-rank
200 to 800
E3
Product of no-rank is not classified and have no marking symbol for rank.
1 kΩ
*3: R
on
measurement circuit
f
=
1 kHz
V
=
0.3 V
V
B
V
V
V
A
R
on
=
V
B
×
1 000
(Ω)
V
A
V
B
Publication date: June 2010
ZJC00481AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DSC5501
DSC5501_PC-Ta
DSC5501_IC-VCE
DSC5501_hFE-IC
P
C
T
a
250
600
I
C
V
CE
I
B
=
3.0 mA
2.5 mA
2.0 mA
500
1.5 mA
1 000
T
a
=
25°C
h
FE
I
C
T
a
=
85°C
800
25°C
600
−30°C
V
CE
=
2 V
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
200
1.0 mA
400
0.5 mA
300
200
100
0
150
100
Forward current transfer ratio h
FE
6
400
50
200
0
0
40
80
120
160
200
Ambient temperature T
a
(
°C
)
DSC5501_VCEsat-IC
0
1
2
3
4
5
0
1
10
10
2
10
3
Collector-emitter voltage V
CE
(V)
DSC5501_IC-VBE
Collector current I
C
(mA)
DSC5501_Cob-VCB
V
CE(sat)
I
C
I
C
V
BE
C
ob
V
CB
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
14
12
10
8
6
4
2
0
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
I
C
/ I
B
= 25
500
V
CE
=
2 V
Collector current I
C
(mA)
400
T
a
=
85°C
300
−30°C
25°C
1
200
10
−1
T
a
=
85°C
−30°C
25°C
1
10
10
2
10
3
100
10
−2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
Collector current I
C
(mA)
DSC5501_fT-IC
Base-emitter voltage V
BE
(V)
DSC5501_VBEsat-IC
Collector-base voltage V
CB
(V)
f
T
I
C
V
BE(sat)
I
C
10
V
CE
= 10 V
T
a
=
25°C
200
Base-emitter saturation voltage V
BE(sat)
(V)
250
I
C
/ I
B
= 10
Transition frequency f
T
(MHz)
1
−30°C
T
a
=
85°C
150
25°C
10
−1
100
50
0
0.1
1
10
100
10
−2
1
10
10
2
10
3
Collector current I
C
(mA)
Collector current I
C
(mA)
2
ZJC00481AED
This product complies with the RoHS Directive (EU 2002/95/EC).
DSC5501
SMini3-F2-B
Unit: mm
2.00
±0.20
0.30
0.02
+0.05
3
1.25
±0.10
2.10
±0.10
1
(0.65)
2
(0.65)
0.13
0.02
+0.05
1.30
±0.10
(5°)
0.425
±0.05
(0.49)
(5°)
0 to 0.10
0.90
±0.10
ZJC00481AED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
your using the products described in this book for any special application, unless our company agrees to your using the products in
this book for any special application.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20100202

DSC5501T Related Products

DSC5501T DSC5501S DSC5501 DSC5501R
Description Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, 3 PIN
Is it Rohs certified? conform to conform to conform to conform to
Maker Panasonic Panasonic Panasonic Panasonic
package instruction SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3
Contacts 3 3 3 3
Reach Compliance Code compliant compliant compliant compli
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 20 V 20 V 20 V 20 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 400 300 200 200
JESD-30 code R-PDSO-F3 R-PDSO-F3 R-PDSO-F3 R-PDSO-F3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.15 W 0.15 W 0.15 W 0.15 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 150 MHz
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