RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC PACKAGE-4
D5008UK Parametric
Parameter Name
Attribute value
Is it Rohs certified?
conform to
Maker
TT Electronics plc
package instruction
CERAMIC PACKAGE-4
Reach Compliance Code
compliant
ECCN code
EAR99
Other features
LOW NOISE
Shell connection
SOURCE
Configuration
COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage
125 V
FET technology
METAL-OXIDE SEMICONDUCTOR
highest frequency band
ULTRA HIGH FREQUENCY BAND
JESD-30 code
R-CDFM-F4
Number of components
2
Number of terminals
4
Operating mode
ENHANCEMENT MODE
Package body material
CERAMIC, METAL-SEALED COFIRED
Package shape
RECTANGULAR
Package form
FLANGE MOUNT
Polarity/channel type
N-CHANNEL
Certification status
Not Qualified
surface mount
YES
Terminal form
FLAT
Terminal location
DUAL
transistor applications
AMPLIFIER
Transistor component materials
SILICON
D5008UK Preview
TetraFET
D5008UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A
K
D
5
4
B
(2 pls)
E
C
1
2
3
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
80W – 50V – 400MHz
PUSH–PULL
FEATURES
G (4 pls)
F
O
• SIMPLIFIED AMPLIFIER DESIGN
H
J
I
M
N
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
DK
PIN 1
PIN 3
PIN 5
SOURCE (COMMON) PIN 2
DRAIN 2
GATE 1
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
6.45
1.65R
45°
16.51
6.47
18.41
1.52
4.82
24.76
1.52
0.81R
0.13
2.16
Tol.
0.13
0.13
5°
0.76
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.02
0.13
Inches
0.254
0.065R
45°
0.650
0.255
0.725
0.060
0.190
0.975
0.060
0.032R
0.005
0.085
Tol.
0.005
0.005
5°
0.03
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.001
0.005
PIN 4
DRAIN 1
GATE 2
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
•
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
175W
125V
±20V
6A
–65 to 150°C
200°C
Semelab Ltd reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case
Max. 1°C / W
Semelab Ltd reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab Ltd reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab Ltd reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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