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1N4942

Description
1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AP
CategoryDiscrete semiconductor    diode   
File Size28KB,2 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
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1N4942 Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AP

1N4942 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSENSITRON
Parts packaging codeDO-41
package instructionHERMETIC SEALED, GLASS PACKAGE-2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY, METALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JEDEC-95 codeDO-41
JESD-30 codeE-LALF-W2
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time5 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5109, REV -
1N4942 to 1N4948
SJ
SX
SV
FAST RECOVERY RECTIFIERS
MAX. RATINGS / ELECTRICAL CHARACTERISTICS
RATING
Peak Inverse Voltage (PIV)
1N4942
1N4944
1N4946
1N4947
1N4948
Average DC Output Current (I
o
)
Peak Single Cycle Surge
Current (I
fsm
)
Operating and Storage Temp.
(T
op
& T
stg
)
Maximum Forward Voltage (V
f
)
Maximum Instantaneous
Reverse Current At Rated (PIV)
Reverse Recovery Time (t
rr
)
1N4942
1N4944
1N4946
1N4947
1N4948
Thermal Resistance (θ
JL
)
All ratings are at T
A
= 25
o
C unless otherwise specified.
MIN
TYP
MAX
200
400
600
800
1000
1.0
15
UNIT
CONDITIONS
-
-
-
Vdc
T
A
= +55
o
C
t
p
= 8.3 ms Single Half Cycle
Sine Wave, Superimposed
On Rated Load
-
I
f
= 1A (300
μsec
pulse,
duty cycle < 2%)
T
A
= 25° C
T
A
= 100° C
-
-
-
-
Amps
Amps(pk)
-65
-
-
+175
1.3
1.0
200
°C
Volts
-
-
μAmps
-
I
f
= 0.5A, I
r
= 1.0A, I
rr
= 0.25A
-
150
150
250
250
500
Nsec
d = 0.375”
-
-
38
°
C/W
221 West Industry Court Deer Park, NY 11729 (631) 586 7600, FAX 631 242 9798
World Wide Web - www.sensitron.com
E-mail Address - sales@sensitron.com

1N4942 Related Products

1N4942 TPS54283_15 1N4947 1N4946
Description 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AP 2-A DUAL NON-SYNCHRONOUS CONVERTER WITH INTEGRATED HIGH-SIDE MOSFET 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AP 1 A, SILICON, SIGNAL DIODE
Is it lead-free? Contains lead - Contains lead Contains lead
Is it Rohs certified? incompatible - incompatible incompatible
Parts packaging code DO-41 - DO-41 DO-41
package instruction HERMETIC SEALED, GLASS PACKAGE-2 - HERMETIC SEALED, GLASS PACKAGE-2 HERMETIC SEALED, GLASS PACKAGE-2
Contacts 2 - 2 2
Reach Compliance Code compli - compli compli
ECCN code EAR99 - EAR99 EAR99
Other features HIGH RELIABILITY, METALLURGICALLY BONDED - HIGH RELIABILITY, METALLURGICALLY BONDED HIGH RELIABILITY, METALLURGICALLY BONDED
Shell connection ISOLATED - ISOLATED ISOLATED
Configuration SINGLE - SINGLE SINGLE
Diode component materials SILICON - SILICON SILICON
Diode type RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V - 1.2 V 1.2 V
JESD-30 code E-LALF-W2 - E-LALF-W2 E-LALF-W2
JESD-609 code e0 - e0 e0
Humidity sensitivity level 1 - 1 1
Number of components 1 - 1 1
Number of terminals 2 - 2 2
Maximum operating temperature 175 °C - 175 °C 175 °C
Minimum operating temperature -65 °C - -65 °C -65 °C
Maximum output current 1 A - 1 A 1 A
Package body material GLASS - GLASS GLASS
Package shape ELLIPTICAL - ELLIPTICAL ELLIPTICAL
Package form LONG FORM - LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified - Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 200 V - 800 V 600 V
Maximum reverse recovery time 5 µs - 5 µs 5 µs
surface mount NO - NO NO
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE - WIRE WIRE
Terminal location AXIAL - AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
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