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1N5397G

Description
1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15
CategoryDiscrete semiconductor    diode   
File Size19KB,2 Pages
ManufacturerSynSemi
Websitehttp://www.synsemi.com/
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1N5397G Overview

1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15

1N5397G Parametric

Parameter NameAttribute value
MakerSynSemi
Reach Compliance Codeunknow
1N5391G - 1N5399G
PRV : 50 - 1000 Volts
Io : 1.5 Amperes
FEATURES :
*
*
*
*
*
Glass passivated chip
High current capability
High reliability
Low reverse current
Low forward voltage drop
GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
DO - 41
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 1.5 Amps.
Maximum DC Reverse Current
at rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL
1N5391G 1N5392G 1N5393G 1N5394G 1N5395G 1N5396G 1N5397G 1N5398G 1N5399G
UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
300
210
300
400
280
400
1.5
500
350
500
600
420
600
800
560
800
1000
700
1000
V
V
V
A
I
FSM
V
F
I
R
I
R(H)
C
J
R
θ
JA
T
J
T
STG
50
1.1
5.0
50
15
30
- 65 to + 175
- 65 to + 175
A
V
µA
µA
pF
°C/W
°C
°C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V
DC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 01 : January 10, 2004

1N5397G Related Products

1N5397G 1N5396G 1N5398G 1N5399G 1N5391G 1N5392G 1N5393G 1N5394G 1N5395G
Description 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15 RECTIFIER DIODE, DO-15 RECTIFIER DIODE, DO-15 RECTIFIER DIODE, DO-15 RECTIFIER DIODE, DO-15 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-15 RECTIFIER DIODE, DO-15 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15
Maker SynSemi SynSemi SynSemi SynSemi SynSemi SynSemi SynSemi SynSemi SynSemi
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow unknow

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