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1N5408G

Description
3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27
Categorysemiconductor    Discrete semiconductor   
File Size489KB,2 Pages
ManufacturerFCI [First Components International]
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1N5408G Overview

3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27

1N5408G Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
stateCONSULT MFR
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage1000 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current200 A
Data Sheet
3.0 Amp Glass Passivated
Standard Rectifiers
Mechanical Dimensions
.052(1.3)
.048(1.2)
1.0(25.4)
MIN.
DIA.
Description
.375(9.5)
.285(7.2)
.210(5.3)
1.0(25.4)
MIN.
.190(4.8)
DIA.
DO-201AD
Features
¬
Low forward voltage drop
¬
High current capability
¬
Low reverse leakage current
¬
High surge current capability
¬
Mounting position: Any
Dimensions in inches and (millimeters)
Mechanical Data
¬
Case: Molded plastic DO-201AD
¬
Epoxy: UL 94V-0 rate flame retardant
¬
Terminals: Solderable per MIL-STD-202
method 208 guaranteed
¬
Polarity:Color band denotes cathode end
¬
Weight: 1.1 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N
SYMBOL 5400G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
L
=75
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 3.0 A
Maximum DC Reverse Current @T
J
=25
C
o
At Rated DC Blocking Voltage @T
J
=125
C
Typical junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junction and Storage
Temperature Range
o
o
1N
5401G
100
70
100
1N
5402G
200
140
200
1N
5404G
400
280
400
3.0
1N
5406G
600
420
600
1N
5407G
800
560
800
1N
5408G UNIT
1000
700
1000
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
I
FSM
150
A
V
F
I
R
C
J
R
JA
1.1
5.0
150
40
15
-55 to +150
o
V
uA
uA
pF
C/W
o
T
J
,T
STG
C
NOTES : (1) Thermal Resistance junction to lead.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

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1N5408G 1N5401G 1N5402G 1N5406G 1N5400G 1N5404G 1N5407G
Description 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-27 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 800 V, SILICON, RECTIFIER DIODE
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