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1SS133T-77

Description
DIODE SMALL SIG 80V 0.13A MSD
CategoryDiscrete semiconductor    diode   
File Size53KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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1SS133T-77 Overview

DIODE SMALL SIG 80V 0.13A MSD

1SS133T-77 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionO-LALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JEDEC-95 codeDO-34
JESD-30 codeO-LALF-W2
JESD-609 codee1
Maximum non-repetitive peak forward current0.6 A
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.13 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.3 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
Maximum reverse current0.5 µA
Maximum reverse recovery time0.004 µs
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperature10
Base Number Matches1
1SS133
Diodes
Switching diode
1SS133
!Applications
High speed switching
!
External dimensions
(Units : mm)
CATHODE BAND (YELLOW)
φ0.4±0.1
!Features
1) Glass sealed envelope. (MSD)
2) High speed. (t
rr
=1.2ns Typ.)
3) High reliability.
29.0±1.0
2.7±0.3
29.0±1.0
φ1.8±0.2
ROHM : MSD
EIAJ :
JEDEC : DO-34
!Construction
Silicon epitaxial planar
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current (1s)
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
I
O
I
surge
P
Tj
Tstg
Limits
90
80
400
130
600
300
175
−65
~
+175
Unit
V
V
mA
mA
mA
mW
°C
°C
!
Electrical characteristics
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
V
F
I
R
C
T
t
rr
Min.
Typ.
Max.
1.2
0.5
2
4
Unit
V
µA
pF
ns
I
F
=100mA
V
R
=80V
V
R
=0.5V,
f=1MHz
V
R
=6V,
I
F
=10mA,
R
L
=50Ω
Conditions

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