2SC5100
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1908)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
160
120
6
8
3
75(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
Ratings
10
max
10
max
120
min
50
min
∗
0.5
max
20
typ
200
typ
V
MHz
16.2
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
∗h
FE
Rank
Conditions
V
CB
=160V
V
EB
=6V
I
C
=50mA
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=0.3A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
Unit
µ
A
23.0
±0.3
V
9.5
±0.2
µ
A
a
b
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(Ω)
10
I
C
(A)
4
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.4
I
B2
(A)
–0.4
t
on
(
µ
s)
0.13typ
t
stg
(
µ
s)
3.50typ
t
f
(
µ
s)
0.32typ
3.35
B
C
E
Weight : Approx 6.5g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
350m
V
CE
( sat ) – I
B
Characteristics
(Typical)
C o l l e c t o r - Em i t t e r Sa t u r a ti o n Vo l ta g e V
C E (s at)
(V )
3
I
C
– V
BE
Temperature Characteristics
(Typical)
8
( V
C E
=4 V )
A
8
0m
20
15
0m
A
A
100
mA
75mA
C o l l e c t o r Cu r r e n t I
C
( A)
2
50m A
Co l l e c t o r Cu r r e n t I
C
( A)
6
6
4
4
mp)
e Te
mp)
20mA
2
Cas
˚C (
2
(Cas
I
B
=10mA
I
C
= 8A
0
2A
0 .6
4A
0 .8
1.0
0
0
0
0
1
2
3
4
0
0.2
0. 4
0. 5
–30˚C
25˚C
125
(Case
1
e Te
Temp
1.0
)
Co ll e ct o r -Em i t t er Vo l t ag e V
C E
(V )
Bas e C u r r e nt I
B
( A)
B as e- Em i t t or V o l t a g e V
BE
( V )
h
FE
– I
C
Characteristics
(Typical)
( V
CE
= 4 V )
200
D C C u r r e n t G ai n h
FE
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= 4V)
200
12 5˚ C
D C Cu r r e n t Ga i n h
FE
Transient Thermal Resistance
θ
j-a
( ˚ C/ W )
4
θ
j- a
– t Characteristics
Typ
100
100
25 ˚ C
–3 0˚ C
1
50
50
0. 5
20
0.02
0.1
0.5
1
5
8
20
0.02
0.1
0 .5
1
5
8
0. 2
1
10
100
T i m e t( m s )
1 0 0 0 20 0 0
C ol l ec t or C urre nt I
C
(A)
Co l l ec to r C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
= 1 2 V )
40
20
10
Safe Operating Area
(Single Pulse)
80
Pc – Ta Derating
Cu t-o ff Fr e q u e n c y f
T
( M H
Z
)
30
M ax im um P ow e r Di s s i p a t i o n P
C
( W )
5
Typ
Co lle cto r Cu r r e n t I
C
( A )
DC
60
20
40
1
0.5
Without Heatsink
Natural Cooling
10
20
Without Heatsink
0
–0.02
–0 . 1
–1
Em it t er C u rre nt I
E
(A)
–8
0.1
5
10
50
1 00
15 0
3.5
0
0
25
50
75
10 0
1 25
150
C o ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
A m b i en t T e m p e r a tu r e T a ( ˚ C )
3.0
1.5
10
m
s
10
0m
W
s
ith
In
fin
ite
he
at
si
nk
127
RF/Wirelessly
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