Preliminary
Data Sheet
2SC5337
NPN Silicon RF Transistor for High-Frequency
Low Distortion Amplifier 4-Pin Power Minimold
FEATURES
• Low distortion: IM
2
= 59.0 dB TYP., IM
3
= 82.0 dB TYP. @ V
CE
= 10 V, I
C
= 50 mA
• Low noise
NF = 1.5 dB TYP. @ V
CE
= 10 V, I
C
= 50 mA, f = 500 MHz
NF = 2.0 dB TYP. @ V
CE
= 10 V, I
C
= 50 mA, f = 1 GHz
• 4-pin power minimold package with improved gain from the 2SC4536
<R>
R09DS0047EJ0300
Rev.3.00
Sep 14, 2012
ORDERING INFORMATION
Part Number
2SC5337
2SC5337-T1
Order Number
2SC5337-AZ
2SC5337-T1-AZ
Package
4-pin power
minimold
(Pb-Free)
Note
Quantity
25 pcs (Non reel)
1 kpcs/reel
Supplying Form
• Magazine case
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
Note
Contains Lead in the part except the electrode terminals.
Remark
To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
30
15
3.0
250
2.0
150
−65
to +150
Unit
V
V
V
mA
W
°C
°C
T
j
T
stg
2
Note
Mounted on 16 cm
×
0.7 mm (t) ceramic substrate (Copper plating)
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0047EJ0300 Rev.3.00
Sep 14, 2012
Page 1 of 5
2SC5337
<R>
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
2nd Order Intermoduration Distortion
⏐S
21e
⏐
NF
NF
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 20 V, I
E
= 0
V
BE
= 2 V, I
C
= 0
V
CE
= 10 V, I
C
= 50 mA
–
–
60
0.01
0.03
120
5.0
5.0
200
μ
A
μ
A
–
V
CE
= 10 V, I
C
= 50 mA, f = 1 GHz
V
CE
= 10 V, I
C
= 50 mA, f = 500 MHz
V
CE
= 10 V, I
C
= 50 mA, f = 1 GHz
V
CE
= 10 V, I
C
= 50 mA, R
S
= R
L
= 75
Ω,
V
in
= 105 dB
μ
V/75
Ω,
f
1
= 190 MHz,
f
2
= 90 MHz, f = f
1
−
f
2
V
CE
= 10 V, I
C
= 50 mA, R
S
= R
L
= 75
Ω,
V
in
= 105 dB
μ
V/75
Ω,
f
1
= 190 MHz,
f
2
= 200 MHz, f = 2
×
f
1
−
f
2
7.0
–
–
–
8.3
1.5
2.0
59.0
–
3.5
3.5
–
dB
dB
dB
dB
Note 2
Note 2
IM
2
3rd Order Intermoduration Distortion
IM
3
–
82.0
–
dB
Notes 1.
Pulse measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
2.
R
S
= R
L
= 50
Ω,
tuned
<R>
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
QR/YQR
QR
60 to 120
QS/YQS
QS
100 to 200
R09DS0047EJ0300 Rev.3.00
Sep 14, 2012
Page 2 of 5
2SC5337
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(W)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
5.0
f = 1 MHz
3.0
2.0
2.0
Mounted on Ceramic Substrate
(16 cm
2
×
0.7 mm (t) )
1.0
1.0
0.5
0.3
1
3
5
10
20
30
0
50
100
150
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
I
B
= 0.6 mA
100
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
300
V
CE
= 10 V
DC Current Gain h
FE
0.5 mA
0.4 mA
80
60
40
20
0.3 mA
100
50
0.2 mA
0.1 mA
0
10
Collector to Emitter Voltage V
CE
(V)
20
10
0.1
1
10
100
1 000
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
Gain Bandwidth Product f
T
(GHz)
Insertion Power Gain |S
21e
|
2
(dB)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
V
CE
= 10 V
f = 1 GHz
10
5
3
2
1
0.5
0.3
10
30
V
CE
= 10 V
f = 1 GHz
50 70 100
5
0
10
30
50 70 100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
R09DS0047EJ0300 Rev.3.00
Sep 14, 2012
Page 3 of 5
2SC5337
INSERTION POWER GAIN, MAG
vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
NOISE FIGURE vs.
COLLECTOR CURRENT
7
V
CE
= 10 V
f = 1 GHz
V
CE
= 10 V
I
C
= 50 mA
Noise Figure NF (dB)
6
5
4
3
2
1
|S
21e
|
2
20
MAG
10
0
0.2
0.4
0.6 0.8 1.0 1.4
2.0
0
5
10
20
50
100
Frequency f (GHz)
Collector Current I
C
(mA)
3rd Order Intermodulation Distortion IM
3
(dB)
2nd Order Intermodulation Distortion (+) IM
2+
(dB)
2nd Order Intermodulation Distortion (–) IM
2–
(dB)
IM
3
, IM
2+
, IM
2–
vs.
COLLECTOR CURRENT
80
70
60
IM
2+
50
40
30
10
IM
2–
IM
3
: V
in
= 110 dB
μ
V/75
Ω
2 tone each
f = 2 × 190 – 200 MHz
IM
2+
: V
in
= 105 dB
μ
V/75
Ω
2 tone each
f = 90 + 100 MHz
IM
2–
: V
in
= 105 dB
μ
V/75
Ω
2 tone each
f = 190 – 90 MHz
V
CE
= 10 V
IM
3
50
100
300
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
<R>
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products]
→
[RF Devices]
→
[Device Parameters]
URL http://www.renesas.com/products/microwave/
R09DS0047EJ0300 Rev.3.00
Sep 14, 2012
Page 4 of 5
2SC5337
PACKAGE DIMENSIONS
4-PIN POWER MINIMOLD (UNIT: mm)
4.5±0.1
2.1
1.6
0.8
0.3
1.5±0.1
1.55
0.85
3.95±0.25
0.8 MIN.
E
B
E
0.1
0.46
±0.06
0.42±0.06
1.5
3.0
0.42±0.06
2.45±0.1
C
0.25±0.02
PIN CONNECTIONS
E : Emitter
C: Collector
B : Base
R09DS0047EJ0300 Rev.3.00
Sep 14, 2012
Page 5 of 5
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