EEWORLDEEWORLDEEWORLD

Part Number

Search

2SC5337-T1-AZ

Description
NPN Silicon RF Transistor for High-Frequency
CategoryDiscrete semiconductor    The transistor   
File Size87KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

2SC5337-T1-AZ Online Shopping

Suppliers Part Number Price MOQ In stock  
2SC5337-T1-AZ - - View Buy Now

2SC5337-T1-AZ Overview

NPN Silicon RF Transistor for High-Frequency

2SC5337-T1-AZ Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it Rohs certified?conform to
Reach Compliance Codecompli
Maximum collector current (IC)0.25 A
ConfigurationSingle
Minimum DC current gain (hFE)60
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)2 W
surface mountYES
Base Number Matches1
Preliminary
Data Sheet
2SC5337
NPN Silicon RF Transistor for High-Frequency
Low Distortion Amplifier 4-Pin Power Minimold
FEATURES
• Low distortion: IM
2
= 59.0 dB TYP., IM
3
= 82.0 dB TYP. @ V
CE
= 10 V, I
C
= 50 mA
• Low noise
NF = 1.5 dB TYP. @ V
CE
= 10 V, I
C
= 50 mA, f = 500 MHz
NF = 2.0 dB TYP. @ V
CE
= 10 V, I
C
= 50 mA, f = 1 GHz
• 4-pin power minimold package with improved gain from the 2SC4536
<R>
R09DS0047EJ0300
Rev.3.00
Sep 14, 2012
ORDERING INFORMATION
Part Number
2SC5337
2SC5337-T1
Order Number
2SC5337-AZ
2SC5337-T1-AZ
Package
4-pin power
minimold
(Pb-Free)
Note
Quantity
25 pcs (Non reel)
1 kpcs/reel
Supplying Form
• Magazine case
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
Note
Contains Lead in the part except the electrode terminals.
Remark
To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
30
15
3.0
250
2.0
150
−65
to +150
Unit
V
V
V
mA
W
°C
°C
T
j
T
stg
2
Note
Mounted on 16 cm
×
0.7 mm (t) ceramic substrate (Copper plating)
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0047EJ0300 Rev.3.00
Sep 14, 2012
Page 1 of 5

2SC5337-T1-AZ Related Products

2SC5337-T1-AZ 2SC5337 2SC5337-T1 2SC5337-AZ
Description NPN Silicon RF Transistor for High-Frequency NPN Silicon RF Transistor for High-Frequency NPN Silicon RF Transistor for High-Frequency NPN Silicon RF Transistor for High-Frequency
Reach Compliance Code compli compli unknow compli
Maximum collector current (IC) 0.25 A 0.25 A 0.25 A 0.25 A
Configuration Single SINGLE SINGLE Single
Polarity/channel type NPN NPN NPN NPN
surface mount YES YES YES YES
Base Number Matches 1 1 1 1
Is it Rohs certified? conform to incompatible - conform to
Minimum DC current gain (hFE) 60 40 - 60
Maximum operating temperature 150 °C 150 °C - 150 °C
Maximum power dissipation(Abs) 2 W 2 W - 2 W
After the program is burned, the program needs to be unplugged and plugged in once before it can start. Why?
When burning a program into the STM32 chip through JTAG, for example, to turn on an LED light, the board needs to unplug the JTAG cable before it can start running the program. However, the board can ...
yanse51 stm32/stm8
What is the function of the inductor in the figure?
What is the function of the inductor in the figure?...
zhonghuadianzie Power technology
About STM32 GPIO mode configuration
Why is the GPIO mode configuration of STM32 as follows: GPIO_Mode_AIN = 0x0, //Analog input GPIO_Mode_IN_FLOATING = 0x04, //Floating input GPIO_Mode_IPD = 0x28, //Pull-down input GPIO_Mode_IPU = 0x48,...
xiongrz944 stm32/stm8
Design of music player based on single chip microcomputer
[font=宋体][size=2]Design of a music player based on a single-chip microcomputer[/size][/font] [font=宋体][size=2]1 Design purpose[/size][/font] [font=宋体][size=2]The single-chip microcomputer is a chip-le...
嚴嚴嚴 51mcu
Introduction to the Principles of Cognitive Ultra-Wideband Radio Technology
Introduction to the Principles of Cognitive Ultra-Wideband Radio Technology...
lorant RF/Wirelessly
Galaxy S8 is expected to feature touch-sensitive volume and power buttons
The Galaxy S8 is expected to be equipped with a more energy-efficient display, touch volume buttons and wireless charging. There are more and more rumors about the Galaxy S8. In addition to the previo...
Jason.D Mobile and portable

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2674  124  356  1344  1845  54  3  8  28  38 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号