2SK2611
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2611
DC−DC Converter, Relay Drive and Motor Drive
Applications
Low drain−source ON-resistance
High forward transfer admittance
Low leakage current
Enhancement−mode
: R
DS (ON)
= 1.2
Ω
(typ.)
: |Y
fs
|
=
7.0 S (typ.)
Unit: mm
: I
DSS
= 100
μA
(max) (V
DS
= 720 V)
: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
900
900
±30
9
27
150
663
9
15
150
−55
to 150
Unit
V
V
V
A
A
W
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
mJ
A
mJ
°C
°C
―
SC-65
2-16C1B
JEITA
TOSHIBA
Weight: 4.6 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch−c)
R
th (ch−a)
Max
0.833
50
Unit
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 15 mH, R
G
= 25
Ω,
I
AR
= 9 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2010-01-29
2SK2611
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
V
(BR) GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±30 V, V
DS
= 0 V
I
G
= ±10
μA,
V
DS
= 0 V
V
DS
= 720 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
GS
= 10 V, I
D
= 4 A
V
DS
= 15 V, I
D
= 4 A
Min
—
±30
—
900
2.0
—
3.0
—
—
—
—
Typ.
—
—
—
—
—
1.2
7.0
2040
45
190
25
Max
±10
—
100
—
4.0
1.4
—
—
—
—
—
pF
Unit
μA
V
μA
V
V
Ω
S
Turn−on time
Switching time
Fall time
t
on
—
60
—
ns
t
f
—
20
—
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
400 V, V
GS
= 10 V, I
D
= 9 A
—
—
—
—
95
58
32
26
—
—
—
—
nC
Source−Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
I
DR
= 9 A, V
GS
= 0 V
I
DR
= 9 A, V
GS
= 0 V, dI
DR
/ dt = 100 A /
μs
Test Condition
—
—
Min
—
—
—
—
—
Typ.
—
—
—
1.6
20
Max
9
27
−1.9
—
—
Unit
A
A
V
μs
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No. (or abbreviation code)
Lot No.
Note 4
TOSHIBA
K2611
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2010-01-29
Power technology
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