2SK2687-01
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
Avalanche-proof
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
FAP-IIIB SERIES
Outline Drawings
TO-220AB
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source peak voltage
Maximum avalanche energy
Maximum power dissipation
Operating and storage
temperature range
Symbol
V
DS
I
D
I
D[puls]
V
GS
E
AV
P
D
T
ch
T
stg
Rating
30
±50
±200
±16
520
60
+150
-55 to +150
Unit
Remarks
V
A
A
V
*1
mJ
W
°C
°C
*1 L=0.277mH, Vcc=12V
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS
=V
GS
V
DS
=30V
V
GS
=0V
V
GS
=±16V V
DS
=0V
I
D
=25A
V
GS
=10V
I
D
=25A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=15V R
G
=10
Ω
I
D
=50A
V
GS
=10V
L=100µH
T
ch
=25°C
Min.
30
1.0
T
ch
=25°C
T
ch
=125°C
V
GS
=4V
V
GS
=10V
22
Typ.
1.5
10
0.2
10
12
7.5
45
2750
1300
600
13
55
180
150
1.14
85
0.17
Max.
2.0
500
1.0
100
17
10
4130
1950
900
20
83
270
230
1.71
130
Units
V
V
µA
mA
nA
mΩ
mΩ
S
pF
ns
A
V
ns
µC
50
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=2xI
DR
V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Thermal characteristics
Item
Thermal resistance
www.fujielectric.co.jp/fdt/scd
Symbol
R
th(ch-c)
R
th(ch-a)
Min.
Typ.
Max.
2.08
75.0
Units
°C/W
°C/W
1
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