2SK2807-01L,S
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
Avalanche-proof
FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
FAP-IIIB SERIES
Outline Drawings
T-pack(S)
T-pack(L)
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source peak voltage
Maximum avalanche energy
Maximum power dissipation
Operating and storage
temperature range
Symbol
V
DS
I
D
I
D[puls]
V
GS
E
AV
P
D
T
ch
T
stg
Rating
30
±35
±140
±16
129.3
30
+150
-55 to +150
Unit
Remarks
V
A
A
V
*1
mJ
W
°C
°C
*1 L=0.70mH, Vcc=12V
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS
=V
GS
V
DS
=30V
V
GS
=0V
V
GS
=±16V V
DS
=0V
I
D
=17.5A V
GS
=10V
I
D
=17.5A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=15V R
G
=10
Ω
I
D
=35A
V
GS
=10V
L=100µH
T
ch
=25°C
Min.
30
1.0
T
ch
=25°C
T
ch
=125°C
V
GS
=4V
V
GS
=10V
16
Typ.
1.5
10
0.2
10
22
14
33
1100
550
240
9
15
75
50
0.98
50
0.08
Max.
2.0
500
1.0
100
30
20
1650
830
360
15
23
115
75
1.71
Units
V
V
µA
mA
nA
mΩ
mΩ
S
pF
ns
A
V
ns
µC
35
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=2xI
DR
V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Thermal characteristics
Item
Thermal resistance
www.fujielectric.co.jp/fdt/scd
Symbol
R
th(ch-c)
R
th(ch-a)
Min.
Typ.
Max.
4.16
125.0
Units
°C/W
°C/W
1
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