2SK2912STL-E datasheet, PDF - EEWORLD Datasheet

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2SK2912STL-E: DescriptionSilicon N Channel MOS FET High Speed Power Switching; CategoryDiscrete semiconductor The transistor; File Size88KB，9 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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2SK2912STL-E Overview

Silicon N Channel MOS FET High Speed Power Switching

2SK2912STL-E Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	SC-83
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	40 A
Maximum drain current (ID)	40 A
Maximum drain-source on-resistance	0.04 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e6
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	250
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	50 W
Maximum pulsed drain current (IDM)	160 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN BISMUTH
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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2SK2912(L), 2SK2912(S)

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1038-0200

(Previous: ADE-208-495A)

Rev.2.00

Sep 07, 2005

Features

•

Low on-resistance

= 15 mΩ typ.

•

High speed switching

•

4 V gate drive device can be driven from 5 V source

Outline

RENESAS Package code: PRSS0004AE-A

(Package name: LDPAK(L))

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK(S)-(1))

1. Gate

2. Drain

3. Source

4. Drain

Rev.2.00 Sep 07, 2005 page 1 of 8

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