2SK2926(L), 2SK2926(S)
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1040-0200
(Previous: ADE-208-535)
Rev.2.00
Sep 07, 2005
Features
•
Low on-resistance
R
DS(on)
= 0.042
Ω
typ.
•
4 V gate drive devices.
•
High speed switching
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2))
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
4
G
1
2
3
D
1. Gate
2. Drain
3. Source
4. Drain
1
2 3
S
Rev.2.00 Sep 07, 2005 page 1 of 8
2SK2926(L), 2SK2926(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Ta = 25
°
C
3. Value at Ta = 25
°
C, Rg
≥
50
Ω
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
I
AP
*
3
E
AR
*
3
Pch*
2
Tch
Tstg
Ratings
60
±20
15
60
15
15
19
25
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note:
4. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
60
±20
—
—
1.5
—
—
7
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.042
0.065
11
500
260
110
10
80
100
110
1.0
55
Max
—
—
10
±10
2.5
0.055
0.11
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
DS
= 60 V, V
GS
= 0
V
GS
=
±16
V, V
DS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 8 A, V
GS
= 10 V*
4
I
D
= 8 A, V
GS
= 4 V*
4
I
D
= 8 A, V
DS
= 10 V*
4
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
GS
= 10 V, I
D
= 8 A,
R
L
= 3.75
Ω
I
F
= 15 A, V
GS
= 0
I
F
= 15 A, V
GS
= 0,
di
F
/ dt = 50 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 8
2SK2926(L), 2SK2926(S)
Main Characteristics
Power vs. Temperature Derating
40
1000
300
30
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
100
30
10
3
1
0.3
PW
20
DC
=
10
0
50
100
150
200
0.1
0.1
sh
ot)
n
Operation in
(T
c=
this area is
25
limited by R
DS(on)
°
C
)
Ta = 25°C
Op
er
a
10
1
10
0
µ
s
0
µ
s
1
m
s
ms
(1
tio
0.3
1
3
10
30
DS
100
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
10 V 6 V 5 V
20
4 .5 V
4V
20
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
12
3.5 V
Drain Current I
D
(A)
16
16
12
8
3V
4
Pulse Test
V
GS
= 2.5 V
8
Tc = 75°C
25°C
4
–25°C
10
0
1
2
3
4
5
0
2
4
6
8
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
0.05
10 V
0.02
0.01
1
2
5
10
20
50
100
V
GS
= 4 V
Drain to Source Saturation Voltage
V
DS (on)
(V)
2.0
Pulse Test
1.6
1.2
I
D
= 20 A
0.8
0.4
10 A
5A
0
4
8
12
16
20
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 8
2SK2926(L), 2SK2926(S)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
0.20
Pulse Test
0.16
I
D
= 10 A
5A
20
10
5
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Tc = –25°C
25°C
0.12
V
GS
= 4 V
0.08
2
1
0.5
0.1 0.2
75°C
0.04
10 V
0
–40
0
40
20 A 10 A 5 A
V
DS
= 10 V
Pulse Test
80
120
160
0.5
1
2
5
10 20
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
500
Drain Current I
D
(A)
Typical Capacitance
vs. Drain to Source Voltage
2000
1000
Reverse Recovery Time trr (ns)
Capacitance C (pF)
200
100
50
20
10
5
0.1 0.2
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
500
200
100
50
20
10
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
0.5
1
2
5
10 20
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
I
D
= 15 A
Switching Characteristics
Gate to Source Voltage V
GS
(V)
20
1000
300
td(off)
100
80
V
GS
V
DS
V
DD
= 10 V
25 V
50 V
16
Switching Time t (ns)
100
30
10
3
1
0.1
V
GS
= 10 V,
V
DD
= 30 V
PW = 5
µs,
duty < 1 %
tf
tr
td(on)
60
12
40
8
20
V
DD
= 50 V
25 V
10 V
4
0
400
0
8
16
24
32
0.2
0.5
1
2
5
10 20
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 8
2SK2926(L), 2SK2926(S)
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
(A)
20
Repetitive Avalanche Energy E
AR
(mJ)
25
I
AP
= 15 A
V
DD
= 25 V
L = 100
µH
duty < 0.1 %
Rg > 50
Ω
Reverse Drain Current I
DR
16
10 V
5V
V
GS
= 0, –5 V
20
12
15
8
10
4
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
5
0
25
50
75
100
125
150
Source to Drain Voltage
V
SD
(V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.05
0.02
1
0.1
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 5°C/W, Tc = 25°C
e
uls
PDM
PW
T
0.03
0.0
h
1s
P
ot
D=
PW
T
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
Pulse Width
Avalanche Test Circuit
V
DS
Monitor
L
I
AP
Monitor
PW (S)
Avalanche Waveform
E
AR
=
1
2
•
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
Rg
D. U. T
V
DD
ID
V
DS
Vin
15 V
50
Ω
0
V
DD
Rev.2.00 Sep 07, 2005 page 5 of 8
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