2SK2964
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
−π−MOSVI)
2
2SK2964
Chopper Regulators, DC−DC Converters and Motor
DriveApplications
4-V gate drive
Low drain-source ON-resistance: R
DS (ON)
= 0.13
Ω
(typ.)
High forward transfer admittance: |Y
fs
| = 2.5 S (typ.)
Low leakage current: I
DSS
= 100
μA
(max) (V
DS
= 30 V)
Enhancement mode: V
th
= 0.8 to 2.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
DC
Drain current
Pulse (Note 1)
Drain power dissipation
Drain power dissipation
(Note 2)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
30
30
±20
2
6
0.5
1.5
56
2
0.05
150
−55
to 150
Unit
V
V
V
A
A
W
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
⎯
⎯
2-5K1B
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
Weight: 0.05 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient
Symbol
R
th (ch−a)
Max
250
Unit
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: V
DD
= 25 V, T
ch
= 25°C (initial), L = 10 mH, R
G
= 25
Ω,
I
AR
= 2 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Handle with care.
1
2009-09-29
2SK2964
Marking
Note 5: A line to the right of a Lot No. identifies the indication of
product Labels.
Part No.
(or abbreviation code)
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Z
Lot No.
C
Note 5
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn−on time
Switching time
Fall time
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
24 V, V
GS
= 10 V, I
D
= 2 A
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
50
Ω
V
GS
10 V
0V
R
L
=
15
Ω
I
D
=
1 A
V
OUT
⎯
⎯
⎯
⎯
⎯
⎯
15
85
195
5.8
4.3
1.5
⎯
ns
⎯
⎯
⎯
⎯
⎯
nC
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
=
±16
V, V
DS
= 0 V
V
DS
= 30 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
GS
= 4 V, I
D
= 1 A
V
GS
= 10 V, I
D
= 1 A
V
DS
= 10 V, I
D
= 1 A
Min
⎯
⎯
30
0.8
⎯
⎯
1.2
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
0.18
0.13
2.5
140
30
80
10
Max
±10
100
⎯
2.0
0.25
0.18
⎯
⎯
⎯
⎯
⎯
pF
Unit
μA
μA
V
V
Ω
S
V
DD
≈
15 V
Duty
≤
1%, t
w
=
10
μs
Source−Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
—
—
I
DR
= 2 A, V
GS
= 0 V
I
DR
= 2 A, V
GS
= 0 V, dI
DR
/dt = 50 A/μs
Min
—
—
—
—
—
Typ.
—
—
—
50
20
Max
2
6
−1.5
—
—
Unit
A
A
V
ns
nC
2
2009-09-29
Embedded System
京公网安备 11010802033920号
EEWORLD
