2SK2991
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2991
DC−DC Converter Relay Drive and Motor Drive
Applications
Low drain−source ON resistance
: R
DS (ON)
= 1.35
Ω
(typ.)
High forward transfer admittance
: |Y
fs
| = 4.0 S (typ.)
Low leakage current : I
DSS
= 100
μA
(max) (V
DS
= 500 V)
Enhancement mode : V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
500
500
±30
5
20
50
180
5
4
150
−55
to 150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
―
―
2-10S1B
Weight: 1.5 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch−c)
R
th (ch−a)
Max
2.5
83.3
Unit
°C / W
°C / W
JEDEC
JEITA
TOSHIBA
―
―
2-10S2B
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 12.2 mH, R
G
= 25
Ω,
I
AR
= 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Weight: 1.5 g (typ.)
1
2009-09-29
2SK2991
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn−on time
Switching time
Fall time
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
400 V, V
GS
= 10 V, I
D
= 5 A
—
—
—
—
—
15
60
17
11
6
—
—
—
—
—
nC
Symbol
I
GSS
V
(BR) GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±25 V, V
DS
= 0 V
I
G
= ±10
μA,
V
DS
= 0 V
V
DS
= 500 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
GS
= 10 V, I
D
= 2.5 A
V
DS
= 10 V, I
D
= 2.5 A
Min
—
±30
—
500
2.0
—
2.5
—
—
—
—
—
Typ.
—
—
—
—
—
1.35
4.0
780
60
200
12
25
Max
±10
—
100
—
4.0
1.50
—
—
—
—
—
—
ns
pF
Unit
μA
V
μA
V
V
Ω
S
Source−Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
I
DR
= 5 A, V
GS
= 0 V
I
DR
= 5 A, V
GS
= 0 V, dI
DR
/ dt = 100 A /
μs
Test Condition
—
—
Min
—
—
—
—
—
Typ.
—
—
—
1400
9
Max
5
20
−1.7
—
—
Unit
A
A
V
ns
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No. (or abbreviation code)
Lot No.
Note 4
K2991
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29
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