74AHCT1G125
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Description
The 74AHCT1G125 is a single non-inverting buffer/bus driver
with a 3-state output. The output enters a high impedance
state when a HIGH-level is applied to the output enable (OE)
pin.
The device is designed for operation with a power
Pin Assignments
(Top View)
OE 1
A 2
5 Vcc
supply range of 4.5V to 5.5V.
NEW PRODUCT
GND 3
4 Y
SOT25 / SOT353
Features
•
•
•
•
•
Supply Voltage Range from 4.5V to 5.5V
± 8 mA Output Drive at 5.0V
CMOS low power consumption
Schmitt Trigger Action at All Inputs Make the Circuit
Tolerant for Slower Input Rise and Fall Time.
ESD Protection per JESD 22
o
o
o
•
•
•
Exceeds 200-V Machine Model (A115-A)
Exceeds 2000-V Human Body Model (A114-A)
Exceeds 1000-V Charged Device Model (C101C)
Applications
•
•
General Purpose Logic
Wide array of products such as:
o
o
o
o
o
PCs, networking, notebooks, netbooks, PDAs
Computer peripherals, hard drives, CD/DVD ROM
TV, DVD, DVR, set top box
Phones, Personal Navigation / GPS
MP3 players ,Cameras, Video Recorders
Latch-Up Exceeds 100mA per JESD 78, Class II
SOT25 and SOT353: Assembled with “Green” Molding
Compound (no Br, Sb)
Lead Free Finish / RoHS Compliant (Note 1)
1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at
http://www.diodes.com/products/lead_free.html.
Notes:
74AHCT1G125
Document number: DS35186Rev. 1 - 2
1 of 9
www.diodes.com
May 2011
© Diodes Incorporated
74AHCT1G125
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Absolute Maximum Ratings
(Note 2)
Symbol
ESD HBM
ESD CDM
ESD MM
V
CC
V
I
V
O
I
IK
I
OK
I
O
I
CC
I
GND
T
J
T
STG
Notes:
Description
Human Body Model ESD Protection
Charged Device Model ESD Protection
Machine Model ESD Protection
Supply Voltage Range
Input Voltage Range
Voltage applied to output in high or low state
Input Clamp Current V
I
<0
Output Clamp Current (V
O
< 0 or V
O
> V
CC
)
Continuous output current (V
O
= 0 to V
CC
)
Continuous current through V
CC
Continuous current through GND
Operating Junction Temperature
Storage Temperature
Rating
2
1
200
-0.5 to 6.5
-0.5 to 6.5
-0.5 to V
CC
+0.5
-20
±20
±25
50
-50
-40 to 150
-65 to 150
Unit
KV
KV
V
V
V
V
mA
mA
mA
mA
mA
°C
°C
NEW PRODUCT
2. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device operation should be
within recommend values.
Recommended Operating Conditions
(Note 3)
Symbol
V
CC
V
IH
V
IL
V
I
V
O
I
OH
I
OL
Δt/ΔV
T
A
Notes:
Parameter
Operating Voltage
High-level Input Voltage
Low-level input voltage
Input Voltage
Output Voltage
High-level output current
Low-level output current
Input transition rise or fall
rate
Operating free-air
temperature
Min
4.5
2.0
Max
5.5
0.8
Unit
V
V
V
V
V
mA
mA
ns/V
ºC
0
0
5.5
V
CC
-8
8
20
-40
125
3. Unused inputs should be held at V
CC
or Ground.
74AHCT1G125
Document number: DS35186Rev. 1 - 2
3 of 9
www.diodes.com
May 2011
© Diodes Incorporated
74AHCT1G125
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Electrical Characteristics
Symbol
V
OH
V
OL
I
I
Parameter
Test Conditions
V
CC
4.5V
4.5V
4.5V
4.5V
0 to 5.5V
5.5V
25ºC
Typ.
4.5
-40ºC to 85ºC
Min
Max
4.4
3.8
0
0.1
0.36
±0.1
0.25
0.1
0.44
±1
2.5
-40ºC to 125ºC
Min
Max
4.4
3.70
0.1
0.55
±2
10
Unit
V
V
μA
μA
μA
pF
I
OH
= -50μA
High Level
Output Voltage I
OH
= -8mA
I
OL
= 50μA
Low Level
Output Voltage I
OL
= 8mA
Input Current
Z State
Leakage
Current
Supply Current
V
I
= 5.5V or GND
V
O
=0 to 5.5V
Min
4.4
3.94
Max
NEW PRODUCT
I
OZ
I
CC
C
i
ΔI
CC
θ
JA
θ
JC
Note:
V
I
= 5.5V or GND
I
O
=0
V
I
= V
CC
– or
Input
Capacitance
GND
One input at 3.4
Additional
V Other inputs at
Supply Current
V
CC
or GND
Thermal
SOT25
Resistance
Junction-to-
SOT353
Ambient
Thermal
SOT25
Resistance
Junction-to-
SOT353
Case
5.5V
5.5V
2.0
1
10
10
10
40
10
5.5V
204
(Note 4)
371
52
(Note 4)
143
1.35
1.5
mA
o
C/W
o
C/W
4. Test conditions for SOT25, and SOT353: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
74AHCT1G125
Document number: DS35186Rev. 1 - 2
4 of 9
www.diodes.com
May 2011
© Diodes Incorporated
Embedded System
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