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FSF44GTR

Description
Rectifier Diode, 1 Phase, 1 Element, 4A, 200V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size287KB,4 Pages
ManufacturerFagor Electrónica
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FSF44GTR Overview

Rectifier Diode, 1 Phase, 1 Element, 4A, 200V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN

FSF44GTR Parametric

Parameter NameAttribute value
MakerFagor Electrónica
package instructionO-PALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current125 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current4 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage200 V
Maximum reverse current5 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
FSF44G ........ FSF48G
4.0 Amp. Glass Passivated Ultrafast Recovery Rectifier
Voltage
200V to 600V
Current
4.0 A
R
DO-201AD (DO-27)
FEATURES
• Ultrafast recovery time for high efficiency
• Low power losses
• Low forward voltage drop
• High forward surge current capability
• Solder dip 260ºC, 10s
• AEC-Q101 qualified
• Component in accordance to RoHS 2011/65/EU
and WEEE 2002/96/EC
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260º C
MECHANICAL DATA
• Case
:
DO-201AD (DO-27). Epoxy meets UL 94V-0
flammability rating.
• Polarity
:
Color band denotes cathode end.
• Terminals
:
Matte tin plated leads, solderable per
MIL-STD-750 Method 2026, J-STD-002 and JESD22-B102.
Consumer grade, meets JESD 201 class 1A whisker test.
TYPICAL APPLICATIONS
Used in high frequency rectifier of switching mode power
supplies, inverters, freewheeling diodes, dc-to-dc converters,
and other power switching application.
Maximun Ratings and Electrical Characteristics at 25°C
Marking Code
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
rr
C
j
T
j
T
stg
Maximum Recurrent Peak Reverse Voltage (V)
Maximum RMS Voltage (V)
Maximum DC Blocking Voltage (V)
Maximum Average Forward Rectified Current
9.5mm Lead Length @ T
A
= 55 °C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC Method)
FSF44G
200
140
200
FSF46G
400
280
400
4.0 A
FSF48G
600
420
600
125 A
35 ns
100 pF
80 pF
-65 to +150 °C
-65 to +150 °C
Maximum Reverse Recovery Time from
I
F
= 0.5A; I
R
= 1A; I
RR
= 0.25A
Typical Junction Capacitance at 1 MHz
and reverse voltage of 4V
DC
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics at Tamb = 25 °C
V
F
I
R
R
th (j-a)
Maximum Instantaneous Forward Voltage @ 4.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Thermal Resistance
(NOTE)
1.0 V
1.3 V
5 µA
500 µA
25 °C/W
1.7 V
@ T
A
= 25 °C
@ T
A
=100 °C
NOTE: Mount on Cu-Pad size 16mm x 16mm on P. C. B.
www.fagorelectronica.com
Document Name: fsf4g
Revision: 1
Version: Jun-16
Page Number: 1/4

FSF44GTR Related Products

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Description Rectifier Diode, 1 Phase, 1 Element, 4A, 200V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 4A, 400V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 4A, 400V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 4A, 200V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN
Maker Fagor Electrónica Fagor Electrónica Fagor Electrónica Fagor Electrónica Fagor Electrónica Fagor Electrónica
package instruction O-PALF-W2 DO-27, 2 PIN O-PALF-W2 O-PALF-W2 O-PALF-W2 DO-27, 2 PIN
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1.3 V 1.3 V 1.7 V 1.7 V 1 V
JEDEC-95 code DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 125 A 125 A 125 A 125 A 125 A 125 A
Number of components 1 1 1 1 1 1
Phase 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 4 A 4 A 4 A 4 A 4 A 4 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Guideline AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101
Maximum repetitive peak reverse voltage 200 V 400 V 400 V 600 V 600 V 200 V
Maximum reverse current 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA
Maximum reverse recovery time 0.035 µs 0.035 µs 0.035 µs 0.035 µs 0.035 µs 0.035 µs
surface mount NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
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