Power Field-Effect Transistor, 60A I(D), 400V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMOPAC-4
| Parameter Name | Attribute value |
| Maker | Infineon |
| package instruction | SIMOPAC-4 |
| Contacts | 4 |
| Reach Compliance Code | compliant |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 400 V |
| Maximum drain current (Abs) (ID) | 60 A |
| Maximum drain current (ID) | 60 A |
| Maximum drain-source on-resistance | 0.075 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PUFM-X4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 625 W |
| Maximum pulsed drain current (IDM) | 240 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | UNSPECIFIED |
| Terminal location | UPPER |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| BSM141 | BSM191/F | BSM181/R | |
|---|---|---|---|
| Description | Power Field-Effect Transistor, 60A I(D), 400V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMOPAC-4 | Power Field-Effect Transistor, 28A I(D), 1000V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMOPAC-4 | Power Field-Effect Transistor, 36A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMOPAC-4 |
| package instruction | SIMOPAC-4 | SIMOPAC-4 | SIMOPAC-4 |
| Contacts | 4 | 4 | 4 |
| Reach Compliance Code | compliant | compliant | compliant |
| Configuration | SINGLE | SINGLE | SINGLE |
| Minimum drain-source breakdown voltage | 400 V | 1000 V | 800 V |
| Maximum drain current (Abs) (ID) | 60 A | 28 A | 36 A |
| Maximum drain current (ID) | 60 A | 28 A | 36 A |
| Maximum drain-source on-resistance | 0.075 Ω | 0.42 Ω | 0.24 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PUFM-X4 | R-PUFM-X4 | R-PUFM-X4 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 4 | 4 | 4 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 625 W | 700 W | 700 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO |
| Terminal form | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Terminal location | UPPER | UPPER | UPPER |
| transistor applications | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON |
| Maker | Infineon | - | Infineon |
| Other features | - | FREDFET | FREDFET |
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