BSM181/R datasheet, PDF - EEWORLD Datasheet

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BSM181/R: DescriptionPower Field-Effect Transistor, 36A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMOPAC-4; CategoryDiscrete semiconductor The transistor; File Size250KB，2 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BSM181/R Overview

Power Field-Effect Transistor, 36A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMOPAC-4

BSM181/R Parametric

Parameter Name	Attribute value
Maker	Infineon
package instruction	SIMOPAC-4
Contacts	4
Reach Compliance Code	compliant
Other features	FREDFET
Configuration	SINGLE
Minimum drain-source breakdown voltage	800 V
Maximum drain current (Abs) (ID)	36 A
Maximum drain current (ID)	36 A
Maximum drain-source on-resistance	0.24 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PUFM-X4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	700 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
transistor applications	SWITCHING
Transistor component materials	SILICON

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BSM181/R Related Products

	BSM181/R	BSM191/F	BSM141
Description	Power Field-Effect Transistor, 36A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMOPAC-4	Power Field-Effect Transistor, 28A I(D), 1000V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMOPAC-4	Power Field-Effect Transistor, 60A I(D), 400V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMOPAC-4
package instruction	SIMOPAC-4	SIMOPAC-4	SIMOPAC-4
Contacts	4	4	4
Reach Compliance Code	compliant	compliant	compliant
Configuration	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	800 V	1000 V	400 V
Maximum drain current (Abs) (ID)	36 A	28 A	60 A
Maximum drain current (ID)	36 A	28 A	60 A
Maximum drain-source on-resistance	0.24 Ω	0.42 Ω	0.075 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PUFM-X4	R-PUFM-X4	R-PUFM-X4
Number of components	1	1	1
Number of terminals	4	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	700 W	700 W	625 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER	UPPER
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maker	Infineon	-	Infineon
Other features	FREDFET	FREDFET	-

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