SKT520/28E datasheet, PDF - EEWORLD Datasheet

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SKT520/28E: DescriptionSilicon Controlled Rectifier, 816.4A I(T)RMS, 520000mA I(T), 2800V V(DRM), 2800V V(RRM), 1 Element, TO-200AC, HERMETIC SEALED, METAL, TO-200AC, 4 PIN; CategoryAnalog mixed-signal IC Trigger device; File Size125KB，4 Pages; ManufacturerSEMIKRON; Websitehttp://www.semikron.com

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SKT520/28E Overview

Silicon Controlled Rectifier, 816.4A I(T)RMS, 520000mA I(T), 2800V V(DRM), 2800V V(RRM), 1 Element, TO-200AC, HERMETIC SEALED, METAL, TO-200AC, 4 PIN

SKT520/28E Parametric

Parameter Name	Attribute value
Maker	SEMIKRON
Parts packaging code	BUTTON
package instruction	DISK BUTTON, O-MEDB-N2
Contacts	2
Reach Compliance Code	unknown
Shell connection	ISOLATED
Nominal circuit commutation break time	200 µs
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	1000 V/us
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	500 mA
JEDEC-95 code	TO-200AC
JESD-30 code	O-MEDB-N2
Maximum leakage current	120 mA
On-state non-repetitive peak current	9000 A
Number of components	1
Number of terminals	2
Maximum on-state current	520000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	METAL
Package shape	ROUND
Package form	DISK BUTTON
Certification status	Not Qualified
Maximum rms on-state current	816.4 A
Maximum repetitive peak off-state leakage current	120000 µA
Off-state repetitive peak voltage	2800 V
Repeated peak reverse voltage	2800 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	END
Trigger device type	SCR

SKT520/28E Preview

RSM

RRM

DRM









V/µs

1000

TRMS

(maximum values for continuous operation)

1400 A

TAV

(sin. 180; T

case

= 55

°C;

DSC)

Thyristors

SKT 520

1900

2100

2300

2500

2900

1800

2000

2200

2400

2800

780 A

SKT 520/18 E

SKT 520/20 E

SKT 520/22 E

SKT 520/24E

SKT 520/28 E

Symbol Conditions

TAV

TSM

(di/dt)

T(TO)

, I

thjc

sin. 180; T

case

= 85

°C;

DSC

= 25

°C

= 125

°C

= 25

°C

= 125

°C

= 25

°C;

= 1 A; di

/dt = 1 A/µs

= 0,67 . V

DRM

f = 50 . . . 60 Hz

= 25

°C;

typ./max.

= 25

°C;

typ./max.

= 125

°C;

typ.

= 25

°C;

= 1500 A; max.

= 125

°C

= 125

°C

= 125

°C;

= V

DRM

; V

= V

RRM

= 25

°C

= 25

°C

= 125

°C

= 125

°C

cont. DSC

sin. 180; DSC/SSC

rec. 120; DSC/SSC

DSC/SSC

SKT 520

520 A

9000 A

8000 A

405 000 A

320 000 A

typ. 1

µs

typ. 2

µs

125 A/

µs

150 mA/500 mA

500 mA/2 A

100 ... 200

µs

2,0 V

1,2 V

0,55 mΩ

120 mA

200 mA

0,25 V

10 mA

0,038

°C/W

0,040/0,082

°C/W

0,045/0,093

°C/W

0,007/0,014

°C/W

– 40 ... +125

°C

– 40 ... +130

°C

10 ... 13 kN

2200 ... 2850 lbs.

240 g

B 10

Features

•

Hermetic metal cases with

ceramic insulators

•

Capsule packages for double

sided cooling

•

Shallow design with single

sided cooling

•

International standard cases

•

Off-state and reverse voltages

up to 2800 V

Typical Applications

•

DC motor control

(e. g. for machine tools)

•

Controlled rectifiers

(e. g. for battery charging)

•

AC controllers

(e. g. for temperature control)

thch

stg

Case

SI units

US units

0895

B 3 – 41

B 3 – 42

B 3 – 43

B 3 – 44

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SKT520/28E Related Products

	SKT520/28E	SKT520/20E
Description	Silicon Controlled Rectifier, 816.4A I(T)RMS, 520000mA I(T), 2800V V(DRM), 2800V V(RRM), 1 Element, TO-200AC, HERMETIC SEALED, METAL, TO-200AC, 4 PIN	Silicon Controlled Rectifier, 816.4A I(T)RMS, 520000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element, TO-200AC, HERMETIC SEALED, METAL, TO-200AC, 4 PIN
Maker	SEMIKRON	SEMIKRON
Parts packaging code	BUTTON	BUTTON
package instruction	DISK BUTTON, O-MEDB-N2	DISK BUTTON, O-MEDB-N2
Contacts	2	2
Reach Compliance Code	unknown	unknown
Shell connection	ISOLATED	ISOLATED
Nominal circuit commutation break time	200 µs	200 µs
Configuration	SINGLE	SINGLE
Critical rise rate of minimum off-state voltage	1000 V/us	1000 V/us
Maximum DC gate trigger current	200 mA	200 mA
Maximum DC gate trigger voltage	3 V	3 V
Maximum holding current	500 mA	500 mA
JEDEC-95 code	TO-200AC	TO-200AC
JESD-30 code	O-MEDB-N2	O-MEDB-N2
Maximum leakage current	120 mA	120 mA
On-state non-repetitive peak current	9000 A	9000 A
Number of components	1	1
Number of terminals	2	2
Maximum on-state current	520000 A	520000 A
Maximum operating temperature	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON
Certification status	Not Qualified	Not Qualified
Maximum rms on-state current	816.4 A	816.4 A
Maximum repetitive peak off-state leakage current	120000 µA	120000 µA
Off-state repetitive peak voltage	2800 V	2000 V
Repeated peak reverse voltage	2800 V	2000 V
surface mount	YES	YES
Terminal form	NO LEAD	NO LEAD
Terminal location	END	END
Trigger device type	SCR	SCR

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