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SKT520/20E

Description
Silicon Controlled Rectifier, 816.4A I(T)RMS, 520000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element, TO-200AC, HERMETIC SEALED, METAL, TO-200AC, 4 PIN
CategoryAnalog mixed-signal IC    Trigger device   
File Size125KB,4 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Download Datasheet Parametric Compare View All

SKT520/20E Overview

Silicon Controlled Rectifier, 816.4A I(T)RMS, 520000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element, TO-200AC, HERMETIC SEALED, METAL, TO-200AC, 4 PIN

SKT520/20E Parametric

Parameter NameAttribute value
MakerSEMIKRON
Parts packaging codeBUTTON
package instructionDISK BUTTON, O-MEDB-N2
Contacts2
Reach Compliance Codeunknown
Shell connectionISOLATED
Nominal circuit commutation break time200 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current500 mA
JEDEC-95 codeTO-200AC
JESD-30 codeO-MEDB-N2
Maximum leakage current120 mA
On-state non-repetitive peak current9000 A
Number of components1
Number of terminals2
Maximum on-state current520000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialMETAL
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current816.4 A
Maximum repetitive peak off-state leakage current120000 µA
Off-state repetitive peak voltage2000 V
Repeated peak reverse voltage2000 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Trigger device typeSCR

SKT520/20E Preview

V
RSM
V
RRM
V
DRM
dv
dt
cr
V/µs
1000
1000
1000
1000
1000
I
TRMS
(maximum values for continuous operation)
1400 A
I
TAV
(sin. 180; T
case
= 55
°C;
DSC)
Thyristors
SKT 520
V
1900
2100
2300
2500
2900
V
1800
2000
2200
2400
2800
780 A
SKT 520/18 E
SKT 520/20 E
SKT 520/22 E
SKT 520/24E
SKT 520/28 E
Symbol Conditions
I
TAV
I
TSM
i
2
t
t
gd
t
gr
(di/dt)
cr
I
H
I
L
t
q
V
T
V
T(TO)
r
T
I
DD
, I
RD
V
GT
I
GT
V
GD
I
GD
R
thjc
sin. 180; T
case
= 85
°C;
DSC
T
vj
= 25
°C
T
vj
= 125
°C
T
vj
= 25
°C
T
vj
= 125
°C
T
vj
= 25
°C;
I
G
= 1 A; di
G
/dt = 1 A/µs
V
D
= 0,67 . V
DRM
f = 50 . . . 60 Hz
T
vj
= 25
°C;
typ./max.
T
vj
= 25
°C;
typ./max.
T
vj
= 125
°C;
typ.
T
vj
= 25
°C;
I
T
= 1500 A; max.
T
vj
= 125
°C
T
vj
= 125
°C
T
vj
= 125
°C;
V
DD
= V
DRM
; V
RD
= V
RRM
T
vj
= 25
°C
T
vj
= 25
°C
T
vj
= 125
°C
T
vj
= 125
°C
cont. DSC
sin. 180; DSC/SSC
rec. 120; DSC/SSC
DSC/SSC
SKT 520
520 A
9000 A
8000 A
405 000 A
2
s
320 000 A
2
s
typ. 1
µs
typ. 2
µs
125 A/
µs
150 mA/500 mA
500 mA/2 A
100 ... 200
µs
2,0 V
1,2 V
0,55 mΩ
120 mA
3V
200 mA
0,25 V
10 mA
0,038
°C/W
0,040/0,082
°C/W
0,045/0,093
°C/W
0,007/0,014
°C/W
– 40 ... +125
°C
– 40 ... +130
°C
10 ... 13 kN
2200 ... 2850 lbs.
240 g
B 10
Features
Hermetic metal cases with
ceramic insulators
Capsule packages for double
sided cooling
Shallow design with single
sided cooling
International standard cases
Off-state and reverse voltages
up to 2800 V
Typical Applications
DC motor control
(e. g. for machine tools)
Controlled rectifiers
(e. g. for battery charging)
AC controllers
(e. g. for temperature control)
R
thch
T
vj
T
stg
F
w
Case
SI units
US units
© by SEMIKRON
0895
B 3 – 41
B 3 – 42
© by SEMIKRON
© by SEMIKRON
B 3 – 43
B 3 – 44
© by SEMIKRON

SKT520/20E Related Products

SKT520/20E SKT520/28E
Description Silicon Controlled Rectifier, 816.4A I(T)RMS, 520000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element, TO-200AC, HERMETIC SEALED, METAL, TO-200AC, 4 PIN Silicon Controlled Rectifier, 816.4A I(T)RMS, 520000mA I(T), 2800V V(DRM), 2800V V(RRM), 1 Element, TO-200AC, HERMETIC SEALED, METAL, TO-200AC, 4 PIN
Maker SEMIKRON SEMIKRON
Parts packaging code BUTTON BUTTON
package instruction DISK BUTTON, O-MEDB-N2 DISK BUTTON, O-MEDB-N2
Contacts 2 2
Reach Compliance Code unknown unknown
Shell connection ISOLATED ISOLATED
Nominal circuit commutation break time 200 µs 200 µs
Configuration SINGLE SINGLE
Critical rise rate of minimum off-state voltage 1000 V/us 1000 V/us
Maximum DC gate trigger current 200 mA 200 mA
Maximum DC gate trigger voltage 3 V 3 V
Maximum holding current 500 mA 500 mA
JEDEC-95 code TO-200AC TO-200AC
JESD-30 code O-MEDB-N2 O-MEDB-N2
Maximum leakage current 120 mA 120 mA
On-state non-repetitive peak current 9000 A 9000 A
Number of components 1 1
Number of terminals 2 2
Maximum on-state current 520000 A 520000 A
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified
Maximum rms on-state current 816.4 A 816.4 A
Maximum repetitive peak off-state leakage current 120000 µA 120000 µA
Off-state repetitive peak voltage 2000 V 2800 V
Repeated peak reverse voltage 2000 V 2800 V
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location END END
Trigger device type SCR SCR
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