1N1183 ... 1N1190, 1N3766, 1N3768, PBY301 ... PB307
1N1183 ... 1N1190, 1N3766, 1N3768,
PBY301 ... PB307
Silicon-Power-Rectifiers
Silizium-Leistungs-Gleichrichter
Version 2007-05-09
13.6
Ø 4
+0.5
14.5
Nominal Current
Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Metal case
Metallgehäuse
Weight approx.
Gewicht ca.
Standard polarity: Cathode to stud / Kathode am Gewinde
Index R: Anode to stud / Anode am Gewinde (e. g. 1N1183R)
Standard packaging: bulk
Standard Lieferform: lose im Karton
35 A
50 ... 1000 V
DO-5
6g
Type
M6
Dimensions - Maße [mm]
Maximum ratings
Type
Typ
1N1183 = PBY301
1N1184 = PBY302
1N1186 = PBY303
1N1188 = PBY304
1N1190 = PBY305
1N3766 = PBY306
1N3768 = PBY307
Repetive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
50
100
200
400
600
800
1000
T
C
= 100°C
f > 15 Hz
T
A
= 25°C
T
A
= 25°C
I
FAV
I
FRM
I
FSM
i
2
t
T
j
T
S
10.7
SW17
36.7
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RSM
[V]
60
120
240
480
720
1000
1200
35 A
110 A
1
)
450/500 A
1000 A
2
s
-65...+175°C
-65...+175°C
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
1
Max. case temperature T
C
= 100°C – Max. Gehäusetemperatur T
C
= 100°C
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© Diotec Semiconductor AG
1
1N1183 ... 1N1190, 1N3766, 1N3768, PBY301 ... PB307
Characteristics
Forward Voltage – Durchlass-Spannung
Leakage Current – Sperrstrom
Thermal Resistance Junction – Case
Wärmewiderstand Sperrschicht – Gehäuse
Recommended mounting torque
Empfohlenes Anzugsdrehmoment
T
j
= 25°C
T
j
= 25°C
I
F
= 100 A
V
R
= V
RRM
V
F
I
R
R
thC
M6
Kennwerte
< 1.5 V
< 500 µA
< 1 K/W
26 ± 10% lb.in.
3 ± 10% Nm
120
[%]
100
10
3
[A]
10
2
80
T
j
= 125°C
60
10
T
j
= 25°C
40
1
20
I
FAV
0
0
T
C
50
100
150
[°C]
Rated forward current versus case temperature
Zul. Richtstrom in Abh. von der Gehäusetemp.
I
F
10
-1
450a-(100a-1,5v)
0.4
V
F
0.8
1.0
1.2
1.4
[V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
10
3
[A]
10
2
î
F
10
1
10
10
2
[n]
10
3
Peak forward surge current versus number of cycles at 50 Hz
Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz
2
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www.diotec.com
/
© Diotec Semiconductor AG
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