RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,
| Parameter Name | Attribute value |
| package instruction | POST/STUD MOUNT, O-CRPM-F4 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.8 A |
| Collector-based maximum capacity | 25 pF |
| Collector-emitter maximum voltage | 16 V |
| Configuration | Single |
| Minimum DC current gain (hFE) | 20 |
| highest frequency band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 code | O-CRPM-F4 |
| Number of terminals | 4 |
| Maximum operating temperature | 200 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | ROUND |
| Package form | POST/STUD MOUNT |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 15 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | FLAT |
| Terminal location | RADIAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
