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2N5945

Description
RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,
CategoryDiscrete semiconductor    The transistor   
File Size13KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

2N5945 Overview

RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,

2N5945 Parametric

Parameter NameAttribute value
package instructionPOST/STUD MOUNT, O-CRPM-F4
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-based maximum capacity25 pF
Collector-emitter maximum voltage16 V
ConfigurationSingle
Minimum DC current gain (hFE)20
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeO-CRPM-F4
Number of terminals4
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)15 W
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
2N5945
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI 2N5945
is Designed for
FM Land Mobile Applications in the
400 to 960 MHz.
PACKAGE STYLE .280 4L STUD
A
45°
FEATURES:
Common Emitter
P
G
= 9.0 dB at 2.0 W/470 MHz
Omnigold™
Metalization System
B
C
E
B
D
C
J
E
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
0.8 A
36 V
16 V
4.0 V
15 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
11.6 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
K
E
F
G
H
K
MINIMUM
inches / mm
I
#8-32 UNC
MAXIMUM
inches / mm
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.572 / 14.53
.130 / 3.30
.245 / 6.22
.640 / 16.26
.175 / 4.45
.275 / 6.99
1.055 / 26.80
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.255 / 6.48
.217 / 5.51
.285 / 7.24
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
h
FE
C
ob
P
G
η
c
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 100 mA
I
C
= 100 mA
I
E
= 2.0 mA
V
CB
= 15 V
V
CE
= 5.0 V
V
CB
= 12.5 V
V
CC
= 12.5 V
P
OUT
= 4.0 W
I
C
= 200 mA
f = 1.0 MHz
f = 470 MHz
MINIMUM TYPICAL MAXIMUM
16
36
4.0
1.0
20
---
9.0
60
---
18
10
---
25
UNITS
V
V
V
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
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