2N6718G-B-T6C-K datasheet, PDF

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2N6718G-B-T6C-K: DescriptionPower Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126C, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size166KB，4 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/; Environmental Compliance

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2N6718G-B-T6C-K Overview

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126C, 3 PIN

2N6718G-B-T6C-K Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	SIP
package instruction	TO-126C, 3 PIN
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	95
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1.6 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
Base Number Matches	1

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UNISONIC TECHNOLOGIES CO., LTD

2N6718

NPN GENERAL PLANAR

TRANSISTOR



DESCRIPTION

NPN SILICON TRANSISTOR

The UTC

2N6718

is designed for general purpose medium

power amplifier and switching applications.



FEATURES

* High Power: 850mW

* High Current: 1A



ORDERING INFORMATION

Ordering Number

Lead Free Plating

Halogen Free

2N6718L-x-AB3-R

2N6718G-x-AB3-R

2N6718L-x-T6C-K

2N6718G-x-T6C-K

2N6718L-x-T92-B

2N6718G-x-T92-B

2N6718L-x-T92-K

2N6718G-x-T92-K

Package

SOT-89

TO-126C

TO-92

Pin Assignment

Packing

Tape Reel

Bulk

Tape Box

Bulk

www.unisonic.com.tw

1 of 4

QW-R201-056.D

2N6718G-B-T6C-K Related Products

	2N6718G-B-T6C-K	2N6718G-A-T92-K	2N6718G-A-AB3-R	2N6718G-A-T92-B	2N6718G-B-AB3-R	2N6718G-A-T6C-K	2N6718G-B-T92-B	2N6718G-B-T92-K
Description	Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126C, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), NPN,	Small Signal Bipolar Transistor, 1A I(C), NPN,	Small Signal Bipolar Transistor, 1A I(C), NPN,	Small Signal Bipolar Transistor, 1A I(C), NPN,	Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126C, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), NPN,	Small Signal Bipolar Transistor, 1A I(C), NPN,
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	TO-126C, 3 PIN	CYLINDRICAL, O-PBCY-T3	SMALL OUTLINE, R-PSSO-F3	CYLINDRICAL, O-PBCY-T3	SMALL OUTLINE, R-PSSO-F3	TO-126C, 3 PIN	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli	compli
Maximum collector current (IC)	1 A	1 A	1 A	1 A	1 A	1 A	1 A	1 A
Collector-emitter maximum voltage	100 V	100 V	100 V	100 V	100 V	100 V	100 V	100 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	95	50	50	50	95	50	95	95
JESD-30 code	R-PSFM-T3	O-PBCY-T3	R-PSSO-F3	O-PBCY-T3	R-PSSO-F3	R-PSFM-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
Maximum operating temperature	125 °C	150 °C	150 °C	150 °C	150 °C	125 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	ROUND	RECTANGULAR	ROUND	RECTANGULAR	RECTANGULAR	ROUND	ROUND
Package form	FLANGE MOUNT	CYLINDRICAL	SMALL OUTLINE	CYLINDRICAL	SMALL OUTLINE	FLANGE MOUNT	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	1.6 W	0.85 W	0.5 W	0.85 W	0.5 W	1.6 W	0.85 W	0.85 W
surface mount	NO	NO	YES	NO	YES	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	FLAT	THROUGH-HOLE	FLAT	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	BOTTOM	SINGLE	BOTTOM	SINGLE	SINGLE	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz
JEDEC-95 code	TO-126	TO-92	-	TO-92	-	TO-126	TO-92	TO-92
Base Number Matches	1	1	1	1	1	1	-	-

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