VS-SD453N/R Series
www.vishay.com
Vishay Semiconductors
Fast Recovery Diodes
(Stud Version), 400 A, 450 A
FEATURES
• High power fast recovery diode series
• 2.0 μs to 3.0 μs recovery time
• High voltage ratings up to 2500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
B-8
• Fast and soft reverse recovery
• Compression bonded encapsulation
• Stud version case style B-8
• Maximum junction temperature 150 °C
• Designed and qualified for industrial level
PRODUCT SUMMARY
I
F(AV)
Package
Circuit configuration
400 A, 450 A
B-8
Single diode
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
SD453N/R
S20
400
T
C
50 Hz
60 Hz
Range
70
630
9300
9730
1200 to 2500
2.0
T
J
25
- 40 to 150
S30
450
70
710
9600
10 050
1200 to 2500
3.0
25
- 40 to 150
V
μs
°C
A
UNITS
A
°C
I
F(AV)
I
F(RMS)
I
FSM
V
RRM
t
rr
T
J
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
12
VS-SD453N/R
16
20
25
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
1200
1600
2000
2500
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1300
1700
2100
2600
50
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Revision: 21-Jan-14
Document Number: 93176
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD453N/R Series
www.vishay.com
Vishay Semiconductors
SD453N/R
S20
S30
400
450
70
70
630
710
55
52
9300
9600
9730
10 050
7820
8070
8190
8450
432
460
395
420
306
326
279
297
4320
4600
1.00
1.09
0.80
0.74
2.20
0.95
1.04
0.60
mW
0.54
1.85
V
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current at
case temperature
Maximum peak, one-cycle forward,
non-repetitive surge current
SYMBOL
I
F(AV)
I
F(RMS)
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms 100 % V
RRM
Sinusoidal half wave,
t = 8.3 ms reapplied
initial T
J
= T
J
t = 10 ms No voltage
maximum
t = 8.3 ms reapplied
t = 10 ms 100 % V
RRM
t = 8.3 ms reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 1500 A, T
J
= T
J
maximum,
t
p
= 10 ms sinusoidal wave
TEST CONDITIONS
180° conduction, half sine wave
UNITS
A
°C
A
°C
I
FSM
A
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I
2
t
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
kA
2
s
kA
2
s
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT T
J
= 25 °C
CODE
t
rr
AT 25 % I
RRM
(μs)
2.0
3.0
TEST CONDITIONS
I
pk
SQUARE
PULSE
(A)
1000
dI/dt
(A/μs)
50
V
r
(V)
- 50
TYPICAL VALUES
AT T
J
= 150 °C
I
FM
t
rr
AT 25 % I
RRM
(μs)
3.5
5.0
Q
rr
(μC)
250
380
I
rr
(A)
120
150
dir
dt
t
rr
t
Q
rr
I
RM(REC)
S20
S30
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and storage
temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
Mounting torque ± 10 %
Approximate weight
Case style
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not-lubricated threads
See dimensions (link at the end of datasheet)
TEST CONDITIONS
VALUES
- 40 to 150
0.1
0.04
50
454
B-8
UNITS
°C
K/W
Nm
g
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.010
0.014
0.017
0.025
0.042
RECTANGULAR CONDUCTION
0.008
0.014
0.019
0.026
0.042
TEST CONDITIONS
UNITS
T
J
= T
J
maximum
K/W
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 21-Jan-14
Document Number: 93176
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD453N/R Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Cas T
e emperature (°C)
150
140
130
120
110
100
90
80
70
60
50
40
0
200
400
600
800
Average Forward Current (A)
30°
60°
90°
120°
180°
DC
Conduc tion Period
Maximum Allowable Case T
emperature (°C)
150
140
130
120
110
100
90
80
70
S
D453N/ R..S S
20 eries
R
thJC
(DC) = 0.1 K/ W
S
D453N/ R 30 S
..S
eries
R
thJC
(DC) = 0.1 K/ W
Conduction Angle
30°
60
0
60° 90° 120°
180°
50 100 150 200 250 300 350 400 450
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Maximum Allowable Case T
emperature (°C)
Maximum Average Forward Power Los (W)
s
Fig. 4 - Current Ratings Characteristics
800
700
600
500
400
300
200
100
0
0
50 100 150 200 250 300 350 400 450
Average Forward Current (A)
Conduction Angle
150
140
130
120
110
100
90
80
70
60
50
0
100
200
300
400
500
600
700
Average Forward Current (A)
60°
30°
90°
120°
180°
DC
Conduction Period
S
D453N/ R 20 S
..S
eries
R
thJC
(DC) = 0.1 K/ W
180°
120°
90°
60°
30°
R Limit
MS
S
D453N/ R..S S
20 eries
T
J
= 150°C
Fig. 2 - Current Ratings Characteristics
Maximum Allowable Case T
emperature (°C)
Fig. 5 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
1000
900
800
700
600
DC
180°
120°
90°
60°
30°
150
140
130
120
110
100
90
80
70
60
0
100
S
D453N/ R..S S
30 eries
R
thJC
(DC) = 0.1 K/ W
Conduction Angle
500 RMS Limit
400
300
200
100
0
0
100
200
300
400
500
600
700
Average Forward Current (A)
Conduction Period
180°
30°
200
60°
300
90°
120°
400
500
S
D453N/ R..S S
20 eries
T
J
= 150°C
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Forward Power Loss Characteristics
Revision: 21-Jan-14
Document Number: 93176
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD453N/R Series
www.vishay.com
Vishay Semiconductors
Peak Half S Wave Forward Current (A)
ine
10000
Maximum Non Repetitive S
urge Current
Vers Pulse T
us
rain Duration.
9000
Initial T = 150 °C
J
No Voltage Reapplied
8000
Rated V
RRM
Reapplied
7000
6000
5000
4000
3000
S
D453N/ R..S S
20 eries
Maximum Average Forward Power Loss (W)
800
700
600
500
400
300
200
100
0
0
100
200
300
400
500
Average Forward Current (A)
Conduction Angle
180°
120°
90°
60°
30°
RMS Limit
S
D453N/ R..S S
30 eries
T
J
= 150°C
2000
0.01
0.1
Pulse T
rain Duration (s)
1
Fig. 7 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
1000
900
800
700
600
DC
180°
120°
90°
60°
30°
Fig. 10 - Maximum Non-Repetitive Surge Current
9000
Peak Half S Wave F
ine
orward Current (A)
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
8000
Initial T
J
= 150 °C
@60 Hz 0.0083 s
7000
@50 Hz 0.0100 s
6000
5000
4000
3000
2000
1
10
100
Number Of Eq ual Amplitud e Half Cycle Current Pulses (N)
500 RMS Limit
400
Conduction Period
300
200
100
0
0
100 200 300 400 500 600 700 800
Average Forward Current (A)
S
D453N/ R..S S
30 eries
T = 150°C
J
S
D453N/ R..S S
30 eries
Fig. 8 - Forward Power Loss Characteristics
9000
8000
7000
6000
5000
4000
3000
2000
1
10
100
Number Of Eq ual Amplitud e Half Cycle Current Pulses (N)
Fig. 11 - Maximum Non-Repetitive Surge Current
10000
9000
8000
7000
6000
5000
4000
3000
2000
0.01
S
D453N/ R..S S
30 eries
Peak Half Sine Wave Forward Current (A)
Peak Half S Wave Forward Current (A)
ine
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 150 °C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Duration.
Initial T = 150 °C
J
No Voltage Reapplied
Rated V
RRM
Reapplied
S
D453N/ R..S S
20 eries
0.1
Pulse T
rain Duration (s)
1
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 12 - Maximum Non-Repetitive Surge Current
Revision: 21-Jan-14
Document Number: 93176
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD453N/R Series
www.vishay.com
Vishay Semiconductors
10000
Ins
tantaneous Forward Current (A)
S
D453N/ R 30 S
..S
eries
10000
Ins
tantaneous Forward Current (A)
S
D453N/ R 20 S
..S
eries
1000
1000
T
J
= 25°C
T = 150°C
J
100
0.5
T
J
= 25°C
T = 150°C
J
1
1.5
2
2.5
3
3.5
100
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous Forward Voltage (V)
Instantaneous Forward Voltage (V)
Fig. 13 - Forward Voltage Drop Characteristics
T
ransient T
hermal Impedance Z
thJC
(K/W)
1
Fig. 14 - Forward Voltage Drop Characteristics
0.1
S
teady S
tate Value:
R
thJC
= 0.1 K/ W
(DC Operation)
0.01
S
D453N/ R..S S S
20/ 30 eries
0.001
0.001
0.01
0.1
S
quare Wave Pulse Duration (s)
1
10
Fig. 15 - Thermal Impedance Z
thJC
Characteristic
100
V
FP
100
I
T = 150°C
J
80
Forward Rec overy (V)
V
FP
I
T = 150°C
J
80
Forward R
ecovery (V)
60
60
40
T
J
= 25°C
40
T = 25°C
J
20
S
D453N/ R..S S
20 eries
0
0
400
800
1200
1600
2000
R
ate Of R Of Forward Current - di/ dt (A/ us)
ise
20
S
D453N/ R..S S
30 eries
0
0
400
800
1200
1600
2000
Rate Of Rise Of Forward Current - di/ dt (A/ us)
Fig. 16 - Typical Forward Recovery Characteristics
Fig. 17 - Typical Forward Recovery Characteristics
Revision: 21-Jan-14
Document Number: 93176
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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