Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3229
DESCRIPTION
·With
TO-220F package
·High
voltage: V
CEO
=300V(min)
APPLICATIONS
·For
color TV chroma output applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
CONDITIONS
VALUE
300
300
5
100
20
2
150
-55~150
UNIT
V
V
V
mA
mA
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC3229
TYP.
MAX
UNIT
V
CEsat
Collector-emitter saturation voltage
I
C
=10mA; I
B
=1m A
1.0
V
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=100μA; I
B
=0
300
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=10μA; I
C
=0
7
V
h
FE-1
DC current gain
I
C
=0.5mA ; V
CE
=10V
20
h
FE-2
DC current gain
I
C
=20mA ; V
CE
=10V
30
200
I
CBO
Collector cut-off current
V
CB
=240V; I
E
=0
1.0
μA
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
1.0
μA
C
OB
Output capacitance
I
E
=0; V
CB
=20V;f=1MHz
4.0
pF
f
T
Transition frequency
I
E
=20mA ; V
CB
=20V
75
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3229
Fig.2 outline dimensions
3
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