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MA02303GJ-R13

Description
IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,TSSOP,8PIN,PLASTIC
CategoryWireless rf/communication    Radio frequency and microwave   
File Size432KB,7 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Download Datasheet Parametric Compare View All

MA02303GJ-R13 Overview

IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,TSSOP,8PIN,PLASTIC

MA02303GJ-R13 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerTE Connectivity
package instructionPLASTIC, MSOP-8
Reach Compliance Codeunknown
Installation featuresSURFACE MOUNT
Number of functions1
Number of terminals8
Maximum operating temperature100 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeTSSOP8,.19
power supply3.3 V
Maximum slew rate415 mA
surface mountYES
RF Power Amplifier IC
for 2.4 GHz ISM
MA02303GJ
Features
Perfect for 802.11B, HOP, SWAP, HOMERF,
Bluetooth, WDECT, MDS, MMDS
Single Positive Supply
Power Added Efficiency As High As 55 Percent
IP
3
= +43 dBm
Output Power 26.5 dBm @ 3.3 V
Output Power 28.5 dBm @ 5.0 V
100 Percent Duty Cycle
2200 to 2600 MHz Operation
8 Pin MSOP Full Downset Plastic Package
Operates Over Wide Ranges of Supply Voltage
Self-Aligned MSAG
®
-Lite MESFET Process
Functional Schematic
PIN 1
PIN 8
Description
The MA02303GJ is an RF power amplifier based on
M/A-COM’s Self-Aligned MSAG
®
MESFET Process.
This product is designed for use in 2.4 GHz ISM
products. For booster applications, it features a low
power “bypass” mode and output power control
PIN Configuration
PIN
1
2
3
4
V
D1
RF
IN
/ V
G1
GND
V
G2
V
G3
GND
RF
OUT
/ V
D3
V
D2
Function
Description
Drain voltage, first stage
RF input and drain
voltage for first stage
Ground
Gate bias voltage,
second stage
Gate bias voltage,
third stage
Ground
RF output and drain
voltage for third stage
Drain voltage for
second stage
Ordering Information
Part Number
MA02303GJ-R7
MA02303GJ-R13
MA02303GJ-SMB
Description
7 inch, 1000 piece reel
13 inch, 3000 piece reel
Sample test board
5
6
7
8
Package bottom is electrical and thermal ground
Absolute Maximum Ratings
1
Rating
DC Supply Voltage
RF Input Power
Junction Temperature
Storage Temperature
Operating Temperature
Moisture Sensitivity
Symbol
V
DD
P
IN
T
J
T
STG
T
OPER
Value
5.5
10
150
-40 to +150
-40 to +100
Unit
V
mW
°C
°C
°C
JEDEC Level 1
1. Beyond these limits, the device may be damaged or device reliability
reduced. Functional operation at absolute-maximum-rated conditions is
not implied.

MA02303GJ-R13 Related Products

MA02303GJ-R13 MA02303GJ-R7
Description IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,TSSOP,8PIN,PLASTIC IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,TSSOP,8PIN,PLASTIC
Is it Rohs certified? incompatible incompatible
Maker TE Connectivity TE Connectivity
package instruction PLASTIC, MSOP-8 PLASTIC, MSOP-8
Reach Compliance Code unknown unknown
Installation features SURFACE MOUNT SURFACE MOUNT
Number of functions 1 1
Number of terminals 8 8
Maximum operating temperature 100 °C 100 °C
Minimum operating temperature -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Encapsulate equivalent code TSSOP8,.19 TSSOP8,.19
power supply 3.3 V 3.3 V
Maximum slew rate 415 mA 415 mA
surface mount YES YES
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