^£.m.L-don.du.ctoi Lpioducti, One.,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistors
2SC4369
DESCRIPTION
•With TO-220F package
•Complement to type 2SA1658
•Good linearity of h
FE
APPLICATIONS
•For general purpose applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
123
Absolute maximum ratings (Ta=25 )
SYMBOL
VCBO
VCEO
VEBO
Ic
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector dissipation
Junction temperature
Storage temperature
T
c
=25
Open emitter
Open base
CONDITIONS
VALUE
30
UNIT
V
30
V
Open collector
5
V
3
A
IB
0.3
A
PC
15
W
Tj
150
T
s
tg
-55-150
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2SC4369
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
l
c
=10mA;l
B
=0
30
V
VcEsat
Collector-emitter saturation voltage
I
C
=2A;I
B
=0.2A
0.8
V
V
BE
Base-emitter on voltage
I
C
=0.5A ; V
ce
=2V
1.0
V
ICBO
Collector cut-off current
V
CB
=20V; I
E
=0
1.0
MA
IEBO
Emitter cut-off current
V
EB
=5V; l
c
=0
1.0
uA
HFE-I
DC current gain
lc=0.5A;V
CE
=2V
70
240
hFE-2
DC current gain
lo=2.5A;VcE=2V
25
fr
Transition frequency
lc=0.5A; V
CE
=2V
100
MHz
•
hpE-1 Classifications
o
70-140
Y
120-240