JAN2N6650 datasheet, PDF - EEWORLD Datasheet

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JAN2N6650: DescriptionPower Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size426KB，5 Pages; ManufacturerVPT Inc

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JAN2N6650 Overview

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN

JAN2N6650 Parametric

Parameter Name	Attribute value
Maker	VPT Inc
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	80 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-204AA
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Guideline	MIL-19500
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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2N6648 2N6649 2N6650

PNP Silicon Power Darlington Transistors

Rev. V1

Features

•

Available in JAN, JANTX, JANTXV per MIL-PRF-19500/527

TO-3 (TO-204AA) Package

High Frequency Response

Designed for Power Amplifier and Shunt and Series Regulator Applications

Electrical Characteristics (T

= +25

C unless otherwise noted)

Parameter

Test Conditions

-200

mA dc

2N6648

2N6649

2N6650

-200

mA dc; R

= 100Ω

2N6648

2N6649

2N6650

-40

V dc, 2N6648

-60

V dc, 2N6649

-80

V dc, 2N6650

-5

V dc

-40

V dc, 2N6648

-60

V dc, 2N6649

-80

V dc, 2N6650

-40

V dc; V

= +1.5 V dc, 2N6648

-60

V dc; V

= +1.5 V dc, 2N6649

-80

V dc; V

= +1.5 V dc, 2N6650

-3.0

V dc; I

-1.0

A dc

-3.0

V dc; I

-5

A dc

-3.0

V dc; I

-10

A dc

-5.0

A dc; I

-10

mA dc

-10

A dc; I

-0.1

A dc

-3.0

V dc; I

-5.0

A dc

-3.0

V dc; I

-10

A dc

= +150

-40

V dc; V

= +1.5 Vdc, 2N6648

-60

V dc; V

= +1.5 Vdc, 2N6649

-80

V dc, V

= +1.5 Vdc, 2N6650

-65

-3.0

V dc; I

-5.0

A dc

Symbol Units

Min.

Max.

Collector

Emitter Breakdown Voltage

(BR)CEO

V dc

-40

-60

-80

-40

-60

-80

—

Collector

Emitter Breakdown Voltage

(BR)CER

V dc

—

Collector

Base Cutoff Current

CBO1

EBO

CEO

mA dc

-1.0

Emitter

Base Cutoff Current

mA dc

—

-10.0

Collector

Emitter Cutoff Current

mA dc

—

-1.0

Collector

Emitter Cutoff Current

CEX1

µA dc

—

-10

Forward Current Transfer Ratio

FE1

FE2

FE3

300

1000

100

—

20,000

-2.0

-3.0

-2.8

-4.5

Saturation Voltage and Resistance

Base

Emitter Voltage (Unsaturated)

CE(SAT)1

V dc

CE(SAT)2

BE(on)1

BE(on)2

V dc

Collector-Emitter Cutoff Current

CEX2

mA dc

—

-3.0

Forward

Current Transfer Ratio

FE4

200

VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit

www.vptcomponents.com

for additional data sheets and product information.

For further information and support please visit:

info@vptcomponents.com

2N6648 2N6649 2N6650

PNP Silicon Power Darlington Transistors

Rev. V1

Information in this document is provided in connection with VPT Components products. These materials are provided by VPT

Components as a service to its customers and may be used for informational purposes only. Except as provided in VPT

Components Terms and Conditions of Sale for such products or in any separate agreement related to this document, VPT

Components assumes no liability whatsoever. VPT Components assumes no responsibility for errors or omissions in these

materials. VPT Components may make changes to specifications and product descriptions at any time, without notice. VPT

Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or

incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by

estoppels or otherwise, to any intellectual property rights is granted by this document.

THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED,

RELATING TO SALE AND/OR USE OF VPT COMPONENTS PRODUCTS INCLUDING LIABILITY OR WARRANTIES RE-

LATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR INCIDENTAL DAMAGES, MERCHANTA-

BILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. VPT

COMPONENTS FURTHER DOES NOT WARRANT THE ACCURACY OR COMPLETENESS OF THE INFORMATION,

TEXT, GRAPHICS OR OTHER ITEMS CON-TAINED WITHIN THESE MATERIALS. VPT COMPONENTS SHALL NOT BE

LIABLE FOR ANY SPECIAL, IN-DIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMI-

TATION, LOST REVE-NUES OR LOST PROFITS, WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.

VPT Components products are not intended for use in medical, lifesaving or life sustaining applications. VPT Components

customers using or selling VPT Components products for use in such applications do so at their own risk and agree to fully

indemnify VPT Components for any damages resulting from such improper use or sale.

VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit

www.vptcomponents.com

for additional data sheets and product information.

For further information and support please visit:

info@vptcomponents.com

JAN2N6650 Related Products

	JAN2N6650	JANTX2N6648	JANTX2N6649	JANTX2N6650	JANTXV2N6650	JANTXV2N6649	JAN2N6649	JAN2N6648	JANTXV2N6648
Description	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN
Maker	VPT Inc	VPT Inc	VPT Inc	VPT Inc	VPT Inc	VPT Inc	VPT Inc	VPT Inc	VPT Inc
package instruction	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	10 A	10 A	10 A	10 A	10 A	10 A	10 A	10 A	10 A
Collector-emitter maximum voltage	80 V	40 V	60 V	80 V	80 V	60 V	60 V	40 V	40 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	100	100	100	100	100	100	100	100	100
JEDEC-95 code	TO-204AA	TO-204AA	TO-204AA	TO-204AA	TO-204AA	TO-204AA	TO-204AA	TO-204AA	TO-204AA
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
Number of components	1	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Guideline	MIL-19500	MIL-19500	MIL-19500	MIL-19500	MIL-19500	MIL-19500	MIL-19500	MIL-19500	MIL-19500
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	-	1	1	1	1	1	1	-	-

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