2SC3281O datasheet, PDF - EEWORLD Datasheet

2SC3281O: DescriptionTRANSISTOR 15 A, 200 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size96KB，2 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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2SC3281O Overview

TRANSISTOR 15 A, 200 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknow
Shell connection	COLLECTOR
Maximum collector current (IC)	15 A
Collector-emitter maximum voltage	200 V
Configuration	SINGLE
Minimum DC current gain (hFE)	35
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	150 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	NOT SPECIFIED
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
VCEsat-Max	3 V
Base Number Matches	1

	2SC3281O	2SC3281-O	2SC3281R
Description	TRANSISTOR 15 A, 200 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power	TRANSISTOR 15 A, 200 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power	TRANSISTOR 15 A, 200 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
Is it Rohs certified?	incompatible	incompatible	incompatible
Reach Compliance Code	unknow	unknow	unknow
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	15 A	15 A	15 A
Collector-emitter maximum voltage	200 V	200 V	200 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	35	80	35
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN
Maximum power consumption environment	150 W	150 W	150 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	30 MHz	30 MHz
VCEsat-Max	3 V	3 V	3 V
Base Number Matches	1	1	1
Terminal surface	NOT SPECIFIED	-	NOT SPECIFIED

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