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2SC3281R

Description
TRANSISTOR 15 A, 200 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size96KB,2 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SC3281R Overview

TRANSISTOR 15 A, 200 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power

2SC3281R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)35
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment150 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceNOT SPECIFIED
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
VCEsat-Max3 V
Base Number Matches1

2SC3281R Related Products

2SC3281R 2SC3281-O 2SC3281O
Description TRANSISTOR 15 A, 200 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power TRANSISTOR 15 A, 200 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power TRANSISTOR 15 A, 200 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code unknow unknow unknow
Shell connection COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 15 A 15 A 15 A
Collector-emitter maximum voltage 200 V 200 V 200 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 35 80 35
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN
Maximum power consumption environment 150 W 150 W 150 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 30 MHz 30 MHz 30 MHz
VCEsat-Max 3 V 3 V 3 V
Base Number Matches 1 1 1
Terminal surface NOT SPECIFIED - NOT SPECIFIED
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