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2SA1282-11-G

Description
Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size105KB,3 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

2SA1282-11-G Overview

Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3 PIN

2SA1282-11-G Parametric

Parameter NameAttribute value
Parts packaging codeTO-92L
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage16 V
ConfigurationSINGLE
Minimum DC current gain (hFE)400
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Base Number Matches1
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