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2N5781

Description
Small Signal Bipolar Transistor, 3.5A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size77KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

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2N5781 Overview

Small Signal Bipolar Transistor, 3.5A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN

2N5781 Parametric

Parameter NameAttribute value
Parts packaging codeTO-39
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)3.5 A
Collector-emitter maximum voltage65 V
ConfigurationSINGLE
Minimum DC current gain (hFE)4
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power dissipation(Abs)10 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)8 MHz
Maximum off time (toff)2500 ns
Maximum opening time (tons)500 ns
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•    •••  !

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