2SC3281-R datasheet, PDF - EEWORLD Datasheet

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2SC3281-R: DescriptionTRANSISTOR POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size341KB，2 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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2SC3281-R Overview

TRANSISTOR POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power

2SC3281-R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	15 A
Collector-emitter maximum voltage	200 V
Configuration	SINGLE
Minimum DC current gain (hFE)	55
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	150 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
VCEsat-Max	3 V
Base Number Matches	1

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TOSHIBA

Discrete Semiconductors

2SC3281

Transistor

Unit in mm

Silicon NPN Triple Diffused Type

Power Ampliﬁer Applications

Features

• Complementary to 2SA1302

• Recommended for 100W High Fidelity Audio Frequency

Ampliﬁer Output Stage

Absolute Maximum Ratings (Ta = 25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector PowerDissipation

(Tc = 25

Junction Temperature

Storage Temperature Range

SYMBOL

CBO

CEO

EBO

stg

RATING

200

1.5

150

-55 ~ 150

UNIT

Electrical Characteristics (Ta = 25

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Breakdown Voltage

DC Current Gain

Saturation Voltage Collector-Emitter

Base-Emitter Voltage

Transition Frequency

Collector Output Capacitance

SYMBOL

CBO

EBO

(BR) CEO

(1) (Νο

)

(2)

CE(sat)

TEST CONDITION

= 200V, I

= 0

= 5V, I

= 0

= 50mA, I

= 0

= 5V, I

= 1mA

= 5V, I

= 8A

= 10A, I

= 1A

= 5V, I

= 8A

= 5V, I

= 1A

= 10V, I

= 0, f = 1MHz

MIN.

–

200

–

TYP.

–

0.40

1.0

270

MAX.

5.0

–

160

–

3.0

1.5

–

UNIT

MHz

Note: h

(1) Classiﬁcation R : 0: 55 ~ 110, 0 : 80 ~ 160

TOSHIBA CORPORATION

1/2

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