UTC 2SD880
NPN EPITAXIAL PLANAR TRANSISTOR
NPN EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC 2SD880 is designed for audio frequency power
amplifier applications.
FEATURE
*High DC Current Gain:
hFE=300(Max.)(V
CE
=5V,I
C
=0.5A)
*Low Saturation Voltage:
V
CE
(sat)=1.0V(Max.)(I
C
=3A,I
B
=0.3A)
*High Power Dissipation:
P
C
=30W (Ta=25°C)
*Complementary to 2SB834
1
TO-220
1:BASE
2:COLLECTOR
3:EMITTER
*Pb-free plating product number: 2SD880L
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
PARAMETER
Maximum Voltages and currents
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Maximum Power Dissipation
Total Power Dissipation
Maximum Temperature
Junction Temperature Range
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
T
OPR
T
STG
VALUE
60
60
7
3
0.5
30
150
-55 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Current gain bandwidth product
SYMBOL
BV
CEO
I
CBO
I
EBO
V
CE(SAT)
V
BE(ON)
hFE
fT
TEST CONDITIONS
I
C
=50mA,I
E
=0
V
CB
=60V,I
E
=0
V
EB
=7V,I
C
=0
I
C
=3A, I
B
=300mA
V
CE
=5V, I
C
=500mA
I
C
=500mA, V
CE
=5V
V
CE
=5V, I
C
=500mA
MIN.
60
TYP.
MAX.
100
100
1
1
300
UNIT
V
µA
µA
V
V
MHZ
60
3
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R203-013,B
UTC 2SD880
CLASSIFICATION of hFE
RANK
RANGE
NPN EPITAXIAL PLANAR TRANSISTOR
O
60-120
Y
100-200
GR
150-300
TYPICAL CHARACTERISTICS
Ic-Vce
POWER DERATING
POWER DISSIPATION, P
D
(WATTS)
3.0
(A)
40
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
0
2.5
2.0
1.5
C
90
80
70
60
50
40
30
20
COLLECTOR CURRENT, I
I
B
= 10mA
1.0
0.5
T
C
= 25℃
1.0
2.0
3.0
4.0
COLLECTOR-EMITTER VOLTAGE, V
5.0
CE
(V)
6.0
TEMPERATURE, T
C
(℃)
DC CURRENT GAIN
300
T
C
= 100℃
DC CURRENT CAIN, h
FE
Ic-Vbe
V
CE
= 5.0V
COLLECTOR CURRENT, I
C
(A)
3.0
2.5
2.0
1.5
1.0
0.5
T
C
= 100℃ 25 -25
V
CE
= 5.0V
100
25
50
30
-25
10
2
5
10
20
50
100
200
500
1k
3k
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
COLLECTOR CURRENT, I
C
(mA)
BASE-EMITTER VOLTAGE, V
BE
(V)
V
CE(sat)
-I
C
COMMON EMITTER
0.5 I
C
/I
B
= 10
VOLTAGE, V (VOLTS)
ACTIVE-REGION SAFE OPERATING AREA (SOA)
10
COLLECTOR CURRENT, I
C
(Amp)
1.0
100ms 10ms
1ms
dc
5.0
2.0
1.0
0.5
0.2
T
C
= 100℃
0.1
0.05
-25℃
0.02
2
5
10
20
50
25℃
Bonding Wire Limit
Second Breakdown Limit
Thermally Limited
at T
C
= 25
℃
(Single Pulse)
0.2
0.1
1.0
100 200
500
1k
2k
3k
2.0
5.0 7.0
10
20
50 70 100
COLLECTOR CURRENT, I
C
(mA)
COLLECTOR EMITTER VOLTAGE, V
CE
(VOLTS)
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R203-013,B
UTC 2SD880
NPN EPITAXIAL PLANAR TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R203-013,B
京公网安备 11010802033920号
EEWORLD
