BAR81...
Silicon RF Switching Diode
•
Designed for use in shunt configuration in
high performance RF switches
•
High shunt signal isolation
•
Low shunt insertion loss
•
Optimized for short - open transformation
using
λ/4
lines
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
BAR81W
"
!
Type
BAR81W
Package
SOT343
Configuration
single shunt-diode
L
S
(nH)
0.15*
Marking
BBs
* series inductance chip to ground
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Total power dissipation
T
s
≤
138°C
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
1
Pb-containing
2
For
Symbol
V
R
I
F
P
tot
T
j
T
op
T
stg
Value
30
100
100
150
-55 ... 125
-55 ... 150
Unit
V
mA
mW
°C
Symbol
R
thJS
Value
≤
120
Unit
K/W
package may be available upon special request
calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2007-04-19
BAR81...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Reverse current
V
R
= 20 V
Forward voltage
I
F
= 100 mA
AC Characteristics
Diode capacitance
V
R
= 1 V,
f
= 1 MHz
V
R
= 3 V,
f
= 1 MHz
Forward resistance
I
F
= 5 mA,
f
= 100 MHz
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA, measured at
I
R
= 3 mA,
R
L
= 100
Ω
I-region width
Shunt Insertion loss
1)
I
F
= 10 mA,
f
= 1.89 GHz
Shunt isolation
1)
V
R
= 3 V,
f
= 1.89 GHz
Configuration of the shunt-diode
- A perfect ground is essential for optimum isolation
- The anode pins should be used as passage for RF
Symbol
min.
I
R
V
F
-
-
Values
typ.
-
0.93
max.
20
1
Unit
nA
V
C
T
-
-
r
f
τ
rr
pF
0.6
0.57
0.7
80
1
0.9
1
-
Ω
-
-
ns
W
I
I
L
I
SO
-
-
-
3.5
30
0.7
-
-
-
µm
dB
1
For
more information please refer to Application Note 049.
2
2007-04-19
Analog electronics
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