BAS16LD
Single high-speed switching diode
Rev. 1 — 12 October 2010
Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, encapsulated in a SOD882D leadless ultra small
Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
1.2 Features and benefits
High switching speed: t
rr
≤
4 ns
Low leakage current
Repetitive peak reverse voltage:
V
RRM
≤
100 V
AEC-Q101 qualified
Low capacitance
Reverse voltage: V
R
≤
100 V
Ultra small and leadless SMD plastic
package
Solderable side pads
1.3 Applications
High-speed switching
General-purpose switching
1.4 Quick reference data
Table 1.
Symbol
I
F
I
R
V
R
t
rr
[1]
[2]
Quick reference data
Parameter
forward current
reverse current
reverse voltage
reverse recovery time
[2]
Conditions
[1]
Min
-
-
-
-
Typ
-
-
-
-
Max
215
0.5
100
4
Unit
mA
μA
V
ns
V
R
= 80 V
Device mounted on an FR4 Printed-Circuit Board (PCB) with 60
μm
copper strip line.
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
NXP Semiconductors
BAS16LD
Single high-speed switching diode
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
1
2
006aab040
Transparent
top view
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
BAS16LD
-
Description
leadless ultra small plastic package; 2 terminals;
body 1.0
×
0.6
×
0.4 mm
Version
SOD882D
Type number
4. Marking
Table 4.
BAS16LD
[1]
Marking codes
Marking code
[1]
1000
0000
Type number
For SOD882D binary marking code description, see
Figure 1.
4.1 Binary marking code description
CATHODE BAR
READING DIRECTION
VENDOR CODE
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac477
Fig 1.
SOD882D binary marking code description
BAS16LD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 12 October 2010
2 of 11
NXP Semiconductors
BAS16LD
Single high-speed switching diode
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
R
I
F
I
FRM
I
FSM
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
t
p
≤
0.5
μs;
δ ≤
0.25
square wave
t
p
= 1
μs
t
p
= 1 ms
t
p
= 1 s
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
[2]
[1]
Conditions
Min
-
-
-
Max
100
100
215
500
Unit
V
V
mA
mA
-
-
-
[1][3]
4
1
0.5
250
150
+150
+150
A
A
A
mW
°C
°C
°C
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb
≤
25
°C
-
-
−55
−65
Device mounted on an FR4 PCB with 60
μm
copper strip line.
T
j
= 25
°C
prior to surge.
Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1][2]
Min
-
Typ
-
Max
500
Unit
K/W
Device mounted on an FR4 PCB with 60
μm
copper strip line.
Reflow soldering is the only recommended soldering method.
BAS16LD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 12 October 2010
3 of 11
NXP Semiconductors
BAS16LD
Single high-speed switching diode
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
V
R
= 25 V
V
R
= 80 V
V
R
= 25 V; T
j
= 150
°C
V
R
= 80 V; T
j
= 150
°C
C
d
t
rr
V
FR
[1]
[2]
[3]
Conditions
[1]
Min
-
-
-
-
-
-
-
-
-
[2]
[3]
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
715
855
1
1.25
30
0.5
30
50
1.5
4
1.75
Unit
mV
mV
V
V
nA
μA
μA
μA
pF
ns
V
diode capacitance
reverse recovery time
forward recovery voltage
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
f = 1 MHz; V
R
= 0 V
-
-
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
When switched from I
F
= 10 mA; t
r
= 20 ns.
BAS16LD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 12 October 2010
4 of 11
NXP Semiconductors
BAS16LD
Single high-speed switching diode
10
3
I
F
(mA)
10
2
006aab132
10
2
I
FSM
(A)
10
mbg704
10
1
(1)
(2)
(3)
(4)
1
10
−1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
F
(V)
10
−1
1
10
10
2
10
3
t
p
(μs)
10
4
(1) T
amb
= 150
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(4) T
amb
=
−40 °C
Based on square wave currents.
T
j
= 25
°C;
prior to surge
Fig 2.
Forward current as a function of forward
voltage; typical values
006aab133
(1)
Fig 3.
Non-repetitive peak forward current as a
function of pulse duration; maximum values
mbg446
10
2
I
R
(μA)
10
1
10
−1
10
−2
10
−3
10
−4
10
−5
0
20
40
60
(3)
0.8
C
d
(pF)
0.6
(2)
0.4
0.2
(4)
0
80
V
R
(V)
100
0
4
8
12
V
R
(V)
16
(1) T
amb
= 150
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(4) T
amb
=
−40 °C
f = 1 MHz; T
amb
= 25
°C
Fig 4.
Reverse current as a function of reverse
voltage; typical values
Fig 5.
Diode capacitance as a function of reverse
voltage; typical values
BAS16LD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 12 October 2010
5 of 11
京公网安备 11010802033920号
EEWORLD
