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BAS16V

Description
0.2 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size289KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
Download Datasheet View All

BAS16V Overview

0.2 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE

MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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BAS16V
Features
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
Lead Free Plating
150mW
Switching Diodes
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Maxim um Ratings
Symbol
V
RM
V
RRM
V
RWM
V
R
I
O
I
FM
P
D
R
©
JA
I
FSM
T
STG
Rating
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
Forward Continuous Current
Power dissipation
Thermal Resistance Junction to Ambient
Peak forward surge current @=1.0us
@=1.0s
Storage Temperature
Rating
100
75
200
300
150
833
2.0
1.0
-65 to +150
Unit
V
V
mA
mA
mW
/W
A
SOT-563
A
B C
D
G
K
H
M
L
DIMENSIONS
INCHES
MM
MAX
.011
.049
.067
MIN
0.15
1.10
1.55
0.50
.043
.067
.023
.011
.007
0.90
1.50
0.56
0.10
0.10
1.10
1.70
0.60
0.30
0.18
MAX
0.30
1.25
1.70
NOTE
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
V
(BR)
I
R
Parameter
Reverse Breakdown Voltage
Reverse Voltage Leakage
Current
Forward Voltage
Total Capacitance
Reverse Recovery Time
Min
75V
Max
25nA
1­A
715mV
855mV
1000mV
1250mV
2pF
4ns
Test Conditions
I
R
=100­A
V
R
=20V
V
R
=75V
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=0, f=1MHZ
I
rr
=1mA,I
R
=I
F
=10mA,
R
L
=100¡
V
F
C
T
t
rr
DIM
A
B
C
D
G
H
K
L
M
MIN
.006
.043
.061
.020
.035
.059
.022
.004
.004
Revision:
B
www.mccsemi.com
1 of 3
2011/08/23
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