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BAS16W

Description
0.1 A, 75 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    Small signal switching diode   
File Size229KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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0.1 A, 75 V, SILICON, SIGNAL DIODE

BAS16W Parametric

Parameter NameAttribute value
Case StyleSOT-323
IF(mA)250
Maximum recurrent peak reverse voltage75
TRR(nS)6
Maximum instantaneous forward voltage1.25
@IF(uA)150
Maximum reverse current1
@VR75
classDiodes
MMBD4148W/BAS16W
Switching Diode
SOT-323
Features
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
Marking:
A2
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics, Single Diode @T
A
=25℃
Parameter
Non-Repetitive Peak reverse voltage
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking
Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Peak forward surge current @=1.0μs
@=1.0s
Power Dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
D
R
θJA
T
j
T
STG
Limits
100
75
53
300
150
2.0
1.0
200
625
150
-65~+150
mW
K/W
Unit
V
V
V
mA
mA
A
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V
(BR) R
I
R
Test
I
R
= 10µA
V
R
=75V
V
R
=20V
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=0, f=1MHz
I
F
=I
R
=10mA,I
rr
=0.1×I
R,
R
L
=100Ω
conditions
MIN
75
1
25
0.715
0.855
1
1.25
2
4
MAX
UNIT
V
µA
nA
Forward voltage
V
F
V
Diode capacitance
Reveres recovery time
C
D
t
rr
pF
nS
http://www.luguang.cn
mail:lge@luguang.cn

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