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BAS86_08

Description
0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-213AA
Categorysemiconductor    Discrete semiconductor   
File Size91KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

BAS86_08 Overview

0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-213AA

BAS86_08 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, GLASS, MINIMELF-2
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeROUND
Package SizeLONG FORM
surface mountYes
Terminal formWRAP AROUND
terminal coatingTIN SILVER
Terminal locationEND
Packaging MaterialsGLASS
CraftsmanshipSCHOTTKY
structureSINGLE
Shell connectionISOLATED
Diode component materialsSILICON
Maximum power consumption limit0.2000 W
Diode typeSIGNAL DIODE
Maximum reverse recovery time0.0050 us
Maximum repetitive peak reverse voltage50 V
Maximum average forward current0.2000 A
BAS86
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diode
FEATURES
• For general purpose applications
• This diode features low turn-on voltage. The
devices are protected by a PN junction guard
ring against excessive voltage, such as
electrostatic discharges
• Metal-on-silicon Schottky barrier device which
is protected by a PN junction guard ring
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
• The low forward voltage drop and fast switching make it
ideal for protection of MOS devices, steering, biasing and
coupling diodes for fast switching and low logic level
applications
• This diode is also available in a DO-35 case with type
designation BAT86
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case:
MiniMELF (SOD-80)
Weight:
approx. 31 mg
Cathode band color:
black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
APPLICATIONS
• Applications where a very low forward voltage is required
PARTS TABLE
PART
BAS86
ORDERING CODE
BAS86-GS18 or BAS86-GS08
CIRCUIT CONFIGURATION
Single
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Continuous reserve voltage
Forward continuous current
(1)
Repetitive peak forward current
(1)
Power dissipation
(1)
TEST CONDITION
SYMBOL
V
R
I
F
VALUE
50
200
500
200
UNIT
V
mA
mA
mW
t
p
< 1 s,
 
0.5
I
FRM
P
tot
Note
(1)
Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
(1)
Junction temperature
Ambient operating temperature range
Storage temperature range
Note
(1)
Valid provided that electrodes are kept at ambient temperature
TEST CONDITION
SYMBOL
R
thJA
T
j
T
amb
T
stg
VALUE
300
125
-65 to +125
-65 to +150
UNIT
K/W
°C
°C
°C
Rev. 2.0, 02-Jun-17
Document Number: 85511
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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