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BAT54ADW-7

Description
0.2 A, 30 V, 4 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size214KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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BAT54ADW-7 Overview

0.2 A, 30 V, 4 ELEMENT, SILICON, SIGNAL DIODE

BAT54TW/ADW/CDW/SDW/BRW
Surface Mount Schottky Barrier Diode Arrays
Features
·
·
·
·
Low Forward Voltage Drop
Fast Switching
Ultra-Small Surface Mount Package
PN Junction Guard Ring for Transient and
ESD Protection
SOT-363
Mechanical Data
·
·
·
·
·
·
·
Case: SOT-363, Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Orientation: See Diagrams Below
Weight: 0.006 grams (approx.)
Marking: See Diagrams Below & Page 2
A
1
Dimensions in inches and (millimeters)
C
2
C
2
C
1
A
2
A
2
AC
1
C
2
A
2
AC
1
C
1
C
2
C
1
C
2
C
3
C
1
C
1
A
2
A
1
A
1
C
2
A
1
C
1
AC
2
A
1
A
2
AC
2
A
1
A
2
A
3
BAT54CDW*
BAT54ADW*
Marking: KL7
Marking: KL6
*Symmetrical configuration, no orientation indicator.
BAT54SDW*
Marking: KL8
BAT54BRW
Marking: KLB
BAT54TW
Marking: KLA
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
I
F
I
FRM
@ t < 1.0s
I
FSM
P
d
R
qJA
T
j
, T
STG
Value
30
200
300
600
200
625
-65 to +125
Unit
V
mA
mA
mA
mW
°C/W
°C
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Repetitive Peak Forward Current (Note 1)
Forward Surge Current (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
Min
30
Typ
¾
¾
¾
¾
¾
Max
¾
240
320
400
500
1000
2.0
10
5.0
Unit
V
Test Condition
I
R
= 100mA
I
F
= 0.1mA
1mA
I
F
=
I
F
= 10mA
I
F
= 30mA
I
F
= 100mA
V
R
= 25V
V
R
= 1.0V, f = 1.0MHz
I
F
= 10mA through I
R
= 10mA
to I
R
= 1.0mA, R
L
= 100W
Forward Voltage (Note 2)
V
F
I
R
C
T
t
rr
¾
¾
¾
¾
mV
Reverse Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
Notes:
mA
pF
ns
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc.
2. Short duration test pulse used to minimize self-heating effect.
http://www.luguang.cn
mail:lge@luguang.cn

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