2N5551
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
4.55
±0.2
NPN Silicon
General Purpose Transistor
TO-92
3.5
±0.2
4.5
±0.2
FEATURES
* Switching and amplification in high voltage
14.3
±0.2
0.46
+0.1
–0.1
(1.27
Typ.)
1.25
–0.2
1 2 3
+0.2
* Low current(max. 600mA)
* High voltage(max.180v)
0.43
+0.08
–0.07
1: Emitter
2: Base
3: Collector
MAXIMUM RATINGS* T
A
=25
℃
unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
stg
Para
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
meter
180
160
6
0.6
2.54
±0.1
Value
Units
V
V
V
A
W
℃
0.625
-55-150
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter
breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
*
V
(BR)EBO
I
CBO
I
EBO
h
FE
(
1
)
*
DC current gain
h
FE
(
2
)
*
h
FE
(
3
)
Collector-emitter saturation voltage
V
CEsat
*
Test
conditions
MIN
180
160
6
50
50
80
80
30
0.15
0.2
1
1
100
300
6
20
8
V
250
TYP
MAX
UNIT
V
V
V
Ic= 100
μ
A,I
E
=0
Ic= 1mA, I
B
=0
I
E
= 10
μ
A, I
C
=0
V
CB
= 120V
V
EB
= 4V, I
C
=0
V
CE
= 5 V,
V
CE
= 5 V,
V
CE
= 5 V,
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA
I
E
=0
n
A
nA
I
C
= 10 mA, I
B
= 1 mA
I
C
= 50 mA, I
B
= 5 mA
I
C
= 10 mA, I
B
= 1 mA
I
C
= 50 mA, I
B
= 5 mA
V
CE
=10V,I
C
=10 mA,,f=100MHz
V
CB
=10V,I
E
=0,f=1MHz
V
BE
=0.5V,I
C
=0,f=1MHz
V
CE
=5V,I
c
=0.25mA,
f=1KHZ,Rg=1kΩ
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Input capacitance
Noise figure
*Pulse test
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
V
BEsat
*
V
MHz
pF
pF
dB
f
T
C
ob
C
ib
NF
Any changing of specification will not be informed individual
Page 1 of 2
2N5551
Elektronische Bauelemente
NPN Silicon
General Purpose Transistor
ELECTRICAL CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2