2C4261 datasheet, PDF - EEWORLD Datasheet

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2C4261: DescriptionSmall Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, PNP, Silicon, DIE-2; CategoryDiscrete semiconductor The transistor; File Size28KB，1 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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2C4261 Overview

Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, PNP, Silicon, DIE-2

2C4261 Parametric

Parameter Name	Attribute value
Parts packaging code	DIE
package instruction	UNCASED CHIP, S-XUUC-N2
Contacts	2
Reach Compliance Code	compli
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JESD-30 code	S-XUUC-N2
Number of components	1
Number of terminals	2
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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Data Sheet No. 2C4261

Chip Type 2C4261

Geometry 0014

Polarity PNP

Generic Packaged Parts:

2N4260, 2N4261

Chip type

2C4261

by Semicoa Semi-

conductors provides performance

similar to these devices.

Part Numbers:

Product Summary:

APPLICATIONS:

Designed for low voltage, low gain RF

amplifier applications.

Features:

Special Characteristics

2N4261,

2N4261UB, 2N4260, 2N4260UB,

SD4261, SD4261F, SQ4261, SQ4261F

ft = 1.8 GHz (typ) at 10 mA/10V

Mechanical Specifications

Metallization

Bonding Pad Size

Die Thickness

Chip Area

Top Surface

Top

Backside

Emitter

Base

Al - 12 kÅ min.

Au - 6.5 kÅ nom.

2.1 mils x 2.1 mils

8 mils nominal

16 mils x 16 mils

Silox Passivated

Electrical Characteristics

T

A

= 25

o

C

Parameter

BV

CEO

BV

CBO

BV

EBO

Test conditions

I

C

= 10.0 mA, I

B

= 0

I

C

= 10 µA, I

E

= 0

I

E

= 10 µA, I

C

= 0

Min

15

4.5

Max

---

Unit

V dc

h

FE

I

C

= 10 mA dc, V

CE

= 1.0 V dc

30

150

---

Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less

than 300 µs, duty cycle less than 2%.

2C4261 Related Products

	2C4261
Description	Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, PNP, Silicon, DIE-2
Parts packaging code	DIE
package instruction	UNCASED CHIP, S-XUUC-N2
Contacts	2
Reach Compliance Code	compli
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JESD-30 code	S-XUUC-N2
Number of components	1
Number of terminals	2
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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