BC807-16W datasheet, PDF - EEWORLD Datasheet

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BC807-16W: Description500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size234KB，2 Pages; ManufacturerHTSEMI（ Jin Yu Semiconductor ）; Websitehttp://www.htsemi.com

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BC807-16W Overview

500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BC807-16W Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	PNP
Maximum collector current	0.5000 A
Maximum Collector-Emitter Voltage	45 V
Processing package description	GREEN, PLASTIC PACKAGE-3
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	NOT SPECIFIED
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
Transistor component materials	silicon
Maximum ambient power consumption	0.3000 W
Transistor type	Universal small signal
Minimum DC amplification factor	250
Rated crossover frequency	80 MHz

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BC0W7

TRANSISTOR (PNP)

BC807-16W

BC807-25W

BC807-40W

FEATURES

Ldeally suited for automatic insertion

epitaxial planar die construction

complementary NPN type available(BC817)

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

MARKING: 807-16:5A;

807-25:5B;

807-40:5C

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

Symbol

CBO

CEO

EBO

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

-50

-45

-5

-0.5

0.3

150

-55-150

Units

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

807-16

807-25

807-40

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

(sat)

=-500mA, I

= -50mA

= -500mA, I

= -50mA

= -5V, I

= -10mA

100

FE(1)

= -1V,

= -100mA

Symbol

CBO

CEO

EBO

CBO

CEO

EBO

Test

conditions

MIN

-50

-45

-5

-0.1

-0.2

-0.1

100

160

250

400

600

-0.7

-1.2

MHz

MAX

UNIT

= -10

A, I

= -10mA, I

= -1

A, I

= -45V, I

= -40V, I

= -4 V, I

100MHz

１　

JinYu

semiconductor

www.htsemi.com

Ｄ½½½：２０１１／０５

BC807-16W Related Products

	BC807-16W	BC807-25W	BC807-40W	BC807W
Description	500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR	500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR	500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR	500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Number of terminals	3	3	3	3
Transistor polarity	PNP	PNP	PNP	PNP
Maximum collector current	0.5000 A	0.5000 A	0.5000 A	0.5000 A
Maximum Collector-Emitter Voltage	45 V	45 V	45 V	45 V
Processing package description	GREEN, PLASTIC PACKAGE-3	GREEN, PLASTIC PACKAGE-3	GREEN, PLASTIC PACKAGE-3	GREEN, PLASTIC PACKAGE-3
Lead-free	Yes	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes	Yes
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE
packaging shape	Rectangle	Rectangle	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
terminal coating	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Terminal location	pair	pair	pair	pair
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	single	single	single	single
Number of components	1	1	1	1
Transistor component materials	silicon	silicon	silicon	silicon
Maximum ambient power consumption	0.3000 W	0.3000 W	0.3000 W	0.3000 W
Transistor type	Universal small signal	Universal small signal	Universal small signal	Universal small signal
Minimum DC amplification factor	250	250	250	250
Rated crossover frequency	80 MHz	80 MHz	80 MHz	80 MHz

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