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Datasheet> All Categories > Discrete semiconductor> The transistor> BC847BT
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BC847BT

Description
100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size343KB，2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric Compare View All

BC847BT Overview

100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BC847BT Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-F3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz

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Download Datasheet
BC846T SERIES
BC847T SERIES
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC846T and
BC847T Series types are NPN Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for
general purpose switching and amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE
ON FOLLOWING PAGE
SOT-523 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
IEBO
BVCBO
BVCBO
BVCEO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(ON)
VBE(ON)
fT
Cc
Ce
NF
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
TJ, Tstg
Θ
JA
BC847T
50
45
BC846T
80
65
5.0
100
200
100
250
-65 to +150
500
UNITS
V
V
V
mA
mA
mA
mW
°C
°C/W
CHARACTERISTICS:
(TA=25°C unless
TEST CONDITIONS
VCB=30V
VCB=30V, TA=150°C
VEB=5.0V
IC=10μA (BC847T)
IC=10μA (BC846T)
IC=10mA (BC847T)
IC=10mA (BC846T)
IE=10μA
IC=10mA, IB=0.5mA
IC=100mA, IB=5.0mA
IC=2.0mA, VCE=5.0V
IC=10mA, VCE=5.0V
VCE=5.0V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
VCE=5.0V, IC=200μA,
RS=2.0KΩ f=1.0KHz, BW=200Hz
otherwise noted)
MIN
TYP
MAX
15
5.0
100
50
80
45
65
5.0
0.20
0.40
0.70
0.77
1.5
11
10
BC846BT
BC847BT
MIN
MAX
200
450
0.58
100
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
V
MHz
pF
pF
dB
BC847CT
MIN
MAX
420
800
hFE
VCE=5.0V, IC=2.0mA
BC846AT
BC847AT
MIN
MAX
110
220
R1 (20-November 2009)

BC847BT Related Products

BC847BT BC846T BC847AT BC847CT HFE22-A/6-H2T22-R BC846BT
Description 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR MINIATURE HIGH POWER LATCHING RELAY 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Is it lead-free? Contains lead - Contains lead Contains lead - Contains lead
Is it Rohs certified? incompatible - incompatible incompatible - incompatible
package instruction SMALL OUTLINE, R-PDSO-F3 - SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 - SMALL OUTLINE, R-PDSO-F3
Contacts 3 - 3 3 - 3
Reach Compliance Code _compli - _compli _compli - _compli
ECCN code EAR99 - EAR99 EAR99 - EAR99
Maximum collector current (IC) 0.1 A - 0.1 A 0.1 A - 0.1 A
Collector-emitter maximum voltage 45 V - 45 V 45 V - 65 V
Configuration SINGLE - SINGLE SINGLE - SINGLE
Minimum DC current gain (hFE) 200 - 110 420 - 200
JESD-30 code R-PDSO-F3 - R-PDSO-F3 R-PDSO-F3 - R-PDSO-F3
JESD-609 code e0 - e0 e0 - e0
Number of components 1 1 1 1 - 1
Number of terminals 3 3 3 3 - 3
Maximum operating temperature 150 °C 150 Cel 150 °C 150 °C - 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
Polarity/channel type NPN - NPN NPN - NPN
Maximum power dissipation(Abs) 0.25 W - 0.25 W 0.25 W - 0.25 W
Certification status Not Qualified - Not Qualified Not Qualified - Not Qualified
surface mount YES YES YES YES - YES
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
Terminal form FLAT GULL WING FLAT FLAT - FLAT
Terminal location DUAL DUAL DUAL DUAL - DUAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING - SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON - SILICON
Nominal transition frequency (fT) 100 MHz - 100 MHz 100 MHz - 100 MHz

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